IP Library Granted Patent US 6,818,558
Granted Patent Utility
US 6,818,558 · App. 10/185,470

Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices

Inventors: Manuj Rathor, Krishnaswamy Ramkumar, Fred Jenne, Loren T. Lancaster
Patented Case View Patent ↗
Granted: Nov 16, 2004 Filed: Jun 28, 2002
Inventors
Manuj Rathor
Krishnaswamy Ramkumar
Fred Jenne
Loren T. Lancaster
Assignee (at issue)
Cypress Semiconductor Corporation

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Quick Facts
Patent No.
US 6,818,558
App. No.
10/185,470
Filed
2002-06-28
Granted
2004-11-16
Kind
B1