Granted Patent
Utility
US 6,818,946 · App. 09/649,368
Trench MOSFET with increased channel density
Inventor:
Prasad Venkatraman
Patented Case
View Patent ↗
Granted: Nov 16, 2004
Filed: Aug 28, 2000
Inventor
Prasad Venkatraman
Assignee (at issue)
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.