Granted Patent
Utility
US 6,821,807 · App. 09/941,982
Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device
Inventors:
Takashi Kano, Hiroki Ohbo, Nobuhiko Hayashi
Patented Case
View Patent ↗
Granted: Nov 23, 2004
Filed: Aug 30, 2001
Inventors
Takashi Kano
Hiroki Ohbo
Nobuhiko Hayashi
Assignee (at issue)
SANYO ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.