Granted Patent
Utility
US 6,821,863 · App. 10/348,150
Method for producing a cavity in a monocrystalline silicon substrate and a semiconductor component having a cavity in a monocrystalline silicon substrate with an epitaxial covering layer
Inventors:
Martin Popp, Dietmar Temmler, Kristin Schupke, Uwe Schilling, Kerstin Pomplun
Patented Case
View Patent ↗
Granted: Nov 23, 2004
Filed: Jan 21, 2003
Inventors
Martin Popp
Dietmar Temmler
Kristin Schupke
Uwe Schilling
Kerstin Pomplun
Assignee (at issue)
Infineon Technologies AG
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.