Granted Patent
Utility
US 6,825,115 · App. 10/341,436
Post silicide laser thermal annealing to avoid dopant deactivation
Inventors:
Qi Xiang, Robert B. Ogle, Eric N. Paton, Cyrus E. Tabery, Bin Yu
Patented Case
View Patent ↗
Granted: Nov 30, 2004
Filed: Jan 14, 2003
Inventors
Qi Xiang
Robert B. Ogle
Eric N. Paton
Cyrus E. Tabery
Bin Yu
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.