Granted Patent
Utility
US 6,828,623 · App. 10/232,487
Floating gate memory device with homogeneous oxynitride tunneling dielectric
Inventors:
Xin Guo, Nian Yang, Zhigang Wang
Patented Case
View Patent ↗
Granted: Dec 7, 2004
Filed: Aug 30, 2002
Inventors
Xin Guo
Nian Yang
Zhigang Wang
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.