IP Library › Granted Patent US 6,828,644
Granted Patent Utility
US 6,828,644 · App. 10/393,389

Semiconductor device with reduced parasitic capacitance between impurity diffusion regions

Inventors: Yuji Asano, Morio Katou, Takao Setoyama, Toshihiko Fukushima, Kazuhiro Natsuaki
Patented Case View Patent ↗
Granted: Dec 7, 2004 Filed: Mar 21, 2003
Inventors
Yuji Asano
Morio Katou
Takao Setoyama
Toshihiko Fukushima
Kazuhiro Natsuaki
Assignees (at issue)
Fujitsu Limited
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 6,828,644
App. No.
10/393,389
Filed
2003-03-21
Granted
2004-12-07
Kind
B2