IP Library › Granted Patent US 6,828,645
Granted Patent Utility
US 6,828,645 · App. 10/460,135

Voltage withstanding structure for a semiconductor device

Inventors: Shinichi Jimbo, Jun Saito, Tomoyuki Yamazaki
Patented Case View Patent ↗
Granted: Dec 7, 2004 Filed: Jun 12, 2003
Inventors
Shinichi Jimbo
Jun Saito
Tomoyuki Yamazaki
Assignee (at issue)
FUJI ELECTRIC CO., LTD.

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Quick Facts
Patent No.
US 6,828,645
App. No.
10/460,135
Filed
2003-06-12
Granted
2004-12-07
Kind
B2