Granted Patent
Utility
US 6,828,650 · App. 10/160,940
Bipolar junction transistor structure with improved current gain characteristics
Inventors:
Edouard D. de Frésart, Patrice M. Parris, Richard J. De Souza, Jennifer H. Morrison, Moaniss Zitouni, Xin Lin
Patented Case
View Patent ↗
Granted: Dec 7, 2004
Filed: May 31, 2002
Inventors
Edouard D. de Frésart
Patrice M. Parris
Richard J. De Souza
Jennifer H. Morrison
Moaniss Zitouni
Xin Lin
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.