IP Library › Granted Patent US 6,830,967
Granted Patent Utility
US 6,830,967 · App. 10/262,714

Method for forming CMOS transistor spacers in a BiCMOS process

Inventors: Kevin Q. Yin, Amol Kalburge, Klaus Schuegraf
Patented Case View Patent ↗
Granted: Dec 14, 2004 Filed: Oct 2, 2002
Inventors
Kevin Q. Yin
Amol Kalburge
Klaus Schuegraf
Assignee (at issue)
Newport Fab, LLC

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Quick Facts
Patent No.
US 6,830,967
App. No.
10/262,714
Filed
2002-10-02
Granted
2004-12-14
Kind
B1