Granted Patent
Utility
US 6,830,986 · App. 10/345,973
SOI semiconductor device having gettering layer and method for producing the same
Inventors:
Katsushige Yamashita, Hisaji Nisimura, Hiromu Yamazaki, Masaki Inoue, Yoshinobu Satoh
Patented Case
View Patent ↗
Granted: Dec 14, 2004
Filed: Jan 17, 2003
Inventors
Katsushige Yamashita
Hisaji Nisimura
Hiromu Yamazaki
Masaki Inoue
Yoshinobu Satoh
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.