Granted Patent
Utility
US 6,833,296 · App. 10/776,215
Method of making a MISFET semiconductor device having a high dielectric constant insulating film with tapered end portions
Inventors:
Jiro Yugami, Natsuki Yokoyama, Toshiyuki Mine, Yasushi Goto
Patented Case
View Patent ↗
Granted: Dec 21, 2004
Filed: Feb 12, 2004
Inventors
Jiro Yugami
Natsuki Yokoyama
Toshiyuki Mine
Yasushi Goto
Assignee (at issue)
Renesas Technology Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.