Granted Patent
Utility
US 6,833,585 · App. 10/120,207
High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage
Inventors:
Min Hwan Kim, Chang-ki Jeon, Young-Suk Choi
Patented Case
View Patent ↗
Granted: Dec 21, 2004
Filed: Apr 10, 2002
Inventors
Min Hwan Kim
Chang-ki Jeon
Young-Suk Choi
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.