Granted Patent
Utility
US 6,834,012 · App. 10/863,673
Memory device and methods of using negative gate stress to correct over-erased memory cells
Inventors:
Yi He, Edward Franklin Runnion, Zhizheng Liu, Zengtao T. Liu, Mark Randolph
Patented Case
View Patent ↗
Granted: Dec 21, 2004
Filed: Jun 8, 2004
Inventors
Yi He
Edward Franklin Runnion
Zhizheng Liu
Zengtao T. Liu
Mark Randolph
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.