Granted Patent
Utility
US 6,835,245 · App. 09/883,922
Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
Inventors:
Toshiaki Ono, Tadami Tanaka, Eiichi Asayama, Hideshi Nishikawa, Masataka Horai
Patented Case
View Patent ↗
Granted: Dec 28, 2004
Filed: Jun 20, 2001
Inventors
Toshiaki Ono
Tadami Tanaka
Eiichi Asayama
Hideshi Nishikawa
Masataka Horai
Assignee (at issue)
Sumitomo Mitsubishi Silicon Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.