Granted Patent
Utility
US 6,835,612 · App. 10/673,705
Method for fabricating a MOSFET having a very small channel length
Inventors:
Annalisa Cappellani, Ludwig Dittmar, Dirk Schumann
Patented Case
View Patent ↗
Granted: Dec 28, 2004
Filed: Sep 26, 2003
Inventors
Annalisa Cappellani
Ludwig Dittmar
Dirk Schumann
Assignee (at issue)
Infineon Technologies AG
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.