IP Library Granted Patent US 6,899,707
Granted Patent B2
US 6,899,707 · App. 09/896,429 · Granted May 31, 2005

Applanation lens and method for ophthalmic surgical applications

Assignee: Intralase Corp.
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Quick Facts
Patent No.
US 6,899,707
App. No.
09/896,429
Granted
May 31, 2005
Kind
B2
Abstract

An improved applanation lens and method for use in an interface between a patient's eye and a surgical laser system does not discolor or lose light transmittance when subjected to gamma radiation. The improved applanation lens has an applanation surface configured to contact the eye upon application of a pressure. The lens is formed of high purity silicon dioxide (SiO 2 ) with purity great enough to resist discoloration upon prolonged irradiation by high-energy radiation such as UV, x-rays, gamma rays or neutrons, and is preferably a fused silica.

Claims (19)

1. An improved applanation device specifically adapted for forming a mechanical interface structure between the anterior surface of a patient's cornea and a surgical laser, the improved device comprising:

(a) a frame for holding an applanation lens onto the outer surface of the patient's cornea;

(b) the lens being sized and shaped to be held in the frame and having an applanation surface configured to contact the outer surface of the patient's cornea and provide a reference surface from which the laser is able to compute a depth of focus characteristic, said lens being formed of high purity synthetic fused silicon dioxide (SiO 2 ) such that said lens does not discolor or lose light transmittance when subjected to gamma radiation.

2. The improved applanation lens of claim 1 , wherein said applanation lens has a transmittance of greater than 90% for wavelengths of light from 275 nm-2500 nm.

3. The improved applanation lens of claim 2 , wherein said applanation lens has a transmittance of greater than 90% for a wavelength of about 1053 nm.

4. The improved applanation lens of claim 1 , wherein said applanation lens has an index of refraction of approximately 1.46.

5. The improved applanation lens of claim 1 , wherein said applanation lens is formed of an SiO 2 with a purity great enough to resist discoloration upon prolonged irradiation by high energy radiation such as gamma rays or neutrons.

6. The improved applanation lens of claim 5 , wherein said high purity SiO 2 is noncrystalline.

7. A method for applanating an anterior surface of a patient's eye and coupling the eye to a surgical laser, the method comprising the steps of:

a. providing an interface that has been sterilized with gamma radiation, the interface including a central orifice, and an applanation lens having top and bottom surfaces;

b. removably coupling a suction ring to the bottom surface of the interface; positioning the interface over an operative area of an eye, such that the suction ring comes into proximate contact with the surface of the eye;

c. applying a suction to the suction ring to thereby stabilize the position of the interface relative to the operative area of the eye;

d. positioning the applanation lens in proximate contact with the operative area of the eye, said applanation lens having an applanation surface configured to contact the eye said applanation lens being formed of high purity synthetic fused SiO 2 , such that said applanation lens does not discolor or lose light transmittance when subjected to gamma radiation; and

e. coupling the applanation lens to the interface to thereby stabilize the position of the lens relative to the operative area of the eye.

8. The method of claim 7 , wherein said applanation lens has a transmittance of greater than 90% for wavelengths of light from 275 nm-2500 nm.

9. The method of claim 8 , wherein said applanation lens has a transmittance of greater than 90% for a wavelength of about 1053 nm.

10. The method of claim 7 , wherein said applanation lens has an index of refraction of approximately 1.46.

11. The method of claim 7 , wherein said applanation lens is formed of an SiO 2 with a purity great enough to resist discoloration upon prolonged irradiation by high energy radiation such as gamma rays or neutrons.

12. The method of claim 7 , wherein said high purity SiO 2 is noncrystalline.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Feb 27, 2009
From: BANK OF AMERICA, N.A. AS ADMINISTRATIVE AGENT
To: AMO DEVELOPMENT, LLC, FORMERLY INTRALASE CORP.
Reel/Frame 022320/0483 →
CORRECTIVE ASSIGNMENT TO CORRECT THE U.S. PATENT NO. 5466233 WAS INCORRECTLY ASSIGNED TO AMO DEVELOPMENT, LLC PREVIOUSLY RECORDED ON REEL 020309 FRAME 0349. ASSIGNOR(S) HEREBY CONFIRMS THE INTRALASE CORP.. Recorded Mar 20, 2008
From: INTRALASE CORP.
To: AMO DEVELOPMENT, LLC
Reel/Frame 020679/0026 →
CHANGE OF NAME Recorded Jan 3, 2008
From: INTRALASE CORP.
To: AMO DEVELOPMENT, LLC
Reel/Frame 020309/0349 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Jun 29, 2007
From: INTRALASE CORP.
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 019501/0208 →
CORRECTED COVER SHEET TO CORRECT ASSIGNEE NAME, PREVIOUSLY RECORDED AT REEL/FRAME 012272/0416 (ASSIGNMENT OF ASSIGNOR'S INTEREST) Recorded Mar 2, 2005
From: SCHOLLER, GORDON S.; WEBB, R. KYLE
To: INTRALASE CORP.
Reel/Frame 015816/0379 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2001
From: SCHOLLER, GORDON S.; WEBB, R. KYLE
To: INTRALASE CORPORATION
Reel/Frame 012272/0416 →
Continuity (2)
Continuation In Part 0977253900 · Jan 29, 2001
Related Publication 20020103482A1 · Aug 1, 2002