Semiconductor with contact contacting diffusion adjacent gate electrode
View Patent ↗Methods of forming a contact to a gate electrode or substrate despite misalignment of the contact opening due to lithographic techniques, and a semiconductor having such a contact. Silicide can be created on the gate and/or diffusion using the invention.
1. A semiconductor comprising:
a contact having a portion that extends on two opposing vertical sides of a vertical structure adjacent a first gate electrode, and wherein the contact contacts a diffusion adjacent the first gate electrode and is insulated horizontally from an adjacent second gate electrode and a spacer adjacent the second gate electrode by an insulating layer; and
a masking layer for insulating the first gate electrode from the contact.
2. The semiconductor of claim 1 , wherein the contact includes an upper portion that is larger than a lower contact portion.
3. The semiconductor of claim 1 , wherein the vertical structure is a spacer.
4. The semiconductor of claim 3 , wherein the contact contacts a substrate adjacent the spacer.
5. The semiconductor of claim 1 , wherein the contact does not horizontally overlap the adjacent second gate electrode.