Gain optimizing for stable single mode operation of external cavity laser
View Patent ↗Known laser diode selections are limited to those designed for high power applications (high gain) or those designed for stable single mode operation in an external cavity (low gain). Exponential gain of laser diodes implemented according to embodiments of the present invention is improved (i.e., optimized) to provide both high output power and stability in an external cavity. This is accomplished by controlling the number of quantum wells, light confinement factor, and the transparency current of the laser diode.
1. A method, comprising:
subtracting a round trip lasing gain of an external cavity diode laser from a round trip spontaneous emission gain at an operating current to obtain a gain dynamic reserve of the external cavity diode laser; and
reducing gain dynamic reserve of the external cavity diode laser to improve stability of the external cavity diode laser.
2. The method of claim 1 , wherein reducing gain dynamic reserve comprises reducing a number of quantum wells in a gain medium in the external cavity diode laser.
3. The method of claim 1 , further comprising reducing a light confinement factor of a gain medium in the external cavity diode laser.
4. The method of claim 1 , further comprising reducing transparency current of a gain medium to increase output power of the external cavity diode laser.
5. The method of claim 4 , further comprising controlling dopants in the gain medium.
6. The method of claim 4 , further comprising increasing a crystalline lattice mismatch between quantum wells and barrier layers in the gain medium.
7. The method of claim 4 , further comprising controlling widths of quantum wells in the gain medium.
8. An external cavity diode laser, comprising:
a gain dynamic reserve GDR of less than approximately six; and
stable single mode operation.
9. The apparatus of claim 8 , wherein a number of quantum wells is three or fewer.
10. The apparatus of claim 9 , wherein each quantum well has a width between approximately five and ten nanometers.
11. The apparatus of claim 9 , wherein each quantum well is an InGaAsP quantum well.
12. The apparatus of claim 8 , further comprising at least one of a S, Se, or Te dopant in a gain medium of the external cavity diode laser.
13. The apparatus of claim 8 , further comprising a crystalline lattice mismatch between a barrier layer and a quantum well layer in a gain medium in the external cavity diode laser.
14. A method, comprising:
determining a gain dynamic reserve GDR for an external cavity diode laser using an expression
GDR
=
2
G
0
d
ln
[
I
0
I
th
]
;
and
forming a gain medium for the external cavity diode laser, the gain medium having a gain dynamic reserve GDR less than approximately six.
15. The method of claim 14 , further comprising forming a number of quantum wells in the gain medium associated with a gain dynamic reserve of less than approximately six.
16. A system, comprising:
a transmitter having an external cavity diode laser, the external cavity diode laser having a gain dynamic reserve of less than approximately six and stable single mode operation; and
a receiver coupled to the transmitter.
17. The system of claim 16 , wherein the transmitter further comprises a modulator coupled to the external cavity diode laser.
18. The system of claim 17 , wherein the transmitter further comprises a data source coupled to the modulator.
19. A method, comprising:
determining a first gain dynamic reserve and a first threshold current for an external cavity diode laser, the first gain dynamic reserve and the first threshold current providing a first mode stability and a first output power, respectively; and
forming a number of quantum wells in a gain medium active region in the external cavity diode laser associated with a second gain dynamic reserve and a second threshold current for the external cavity diode laser, the second gain dynamic reserve and the second threshold current providing a second mode stability better than the first mode stability and the second output power lower than the first output power, respectively.
20. The method of claim 19 , further comprising:
determining a third gain dynamic reserve and a third threshold current for the external cavity diode laser, the third gain dynamic reserve and the third threshold current providing a third mode stability better than the first mode stability and a third output power higher than the first output power, respectively; and
forming a width for a number of quantum wells associated with the third gain dynamic reserve and the third threshold current, the width of the quantum wells associated with the third gain dynamic reserve and the third threshold current being optimized to reduce the transparency current.
21. The method of claim 20 , further comprising:
determining a fourth gain dynamic reserve and a fourth threshold current for the external cavity diode laser, the fourth gain dynamic reserve and the fourth threshold current having a fourth mode stability better than the third mode stability and the fourth output power higher than the first output power, respectively; and
generating a light confinement factor in the gain medium active region associated with the fourth gain dynamic reserve and the fourth threshold current in the external cavity diode laser, the light confinement factor associated with the fourth gain dynamic reserve and the fourth threshold current being less than a light confinement factor associated with the third gain dynamic reserve and the third threshold current, respectively.
22. The method of claim 19 , further comprising:
determining a third gain dynamic reserve and a third threshold current for the external cavity diode laser, the third gain dynamic reserve and the third threshold current having a third mode stability better than the first mode stability and a third output power higher than the first output power, respectively; and
doping the gain medium active region with dopants associated with the third gain dynamic reserve and the third threshold current, the dopants associated with the third gain dynamic reserve and the third threshold current being different from dopants associated with the second gain dynamic reserve and the second threshold current, respectively.
23. The method of claim 19 , further comprising:
determining a third gain dynamic reserve and a third threshold current for the external cavity diode laser, the third gain dynamic reserve and the third threshold current having a third mode stability better than the first mode stability and a third output power higher than the first output power, respectively; and
forming a crystalline lattice mismatch between at least one barrier layer in the gain medium active region and at least one quantum well layer in the gain medium active region associated with the third gain dynamic reserve and the third threshold current in the external cavity diode laser, the crystalline lattice mismatch associated with the third gain dynamic reserve and the third threshold current being greater than a crystalline lattice mismatch associated with the second gain dynamic reserve and the second threshold current, respectively.