Etched-facet semiconductor optical component with integrated end-coupled waveguide and methods of fabrication and use thereof
An optical apparatus comprises a semiconductor optical device waveguide formed on a semiconductor substrate, and an integrated end-coupled waveguide formed on the semiconductor substrate. The integrated waveguide may comprise materials differing from those of the device waveguide and the substrate. Spatially selective material processing may be employed for first forming the optical device waveguide on the substrate, and for subsequently depositing and forming the integrated end-coupled waveguide on the substrate. Spatially selective material processing enables accurate spatial mode matching and transverse alignment of the waveguides, and multiple device waveguides and corresponding integrated end-coupled waveguides may be fabricated concurrently on a common substrate on a wafer scale. The integrated end-coupled waveguide may be adapted for fulfilling one or more functions, and the device waveguide and/or integrated waveguide and/or spatially selective material processing steps may be adapted in a variety of ways for achieving the needed/desired degree of end-coupling.
1. An optical apparatus, comprising:
a semiconductor device substrate;
a semiconductor optical device formed on the device substrate and including a device waveguide segment terminating at a device end face;
an end-coupled planar optical waveguide formed on the device substrate at the device end face and end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide including a waveguide core and waveguide cladding; and
a reflective coating formed between the device substrate and at least a portion of the end-coupled waveguide.
2. The apparatus of claim 1 , wherein the reflective coating comprises a metallic coating.
3. The apparatus of claim 1 , wherein the reflective coating comprises a dielectric coating.
4. The apparatus of claim 1 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
5. The apparatus of claim 1 , wherein a proximal portion of the end-coupled waveguide includes a) waveguide cladding material between the device end face and a proximal end of the waveguide core, or b) waveguide core material on the device end face extending upward from the waveguide core away from the substrate.
6. The apparatus of claim 1 , further comprising an optical coating formed between the device end face and the end-coupled waveguide.
7. The apparatus of claim 1 , wherein the end-coupled waveguide includes a dual-core segment.
8. The apparatus of claim 1 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
9. An optical apparatus, comprising:
a semiconductor device substrate;
a semiconductor optical device formed on the device substrate and including a device waveguide segment terminating at a device end face; and
an end-coupled planar optical waveguide formed on the device substrate at the device end face and end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide including a waveguide core and waveguide cladding,
wherein at least a portion of the device end face is curved in the horizontal dimension.
10. The apparatus of claim 9 , wherein the curved portion of the end face is convex.
11. The apparatus of claim 9 , wherein the curved portion of the end face serves to increase reflective optical coupling of a device optical mode back into the device waveguide segment, relative to a substantially flat device end face.
12. The apparatus of claim 9 , wherein the curved portion of the end face serves to increase optical end-coupling between the device waveguide segment and the end-coupled waveguide, relative to a substantially flat device end face.
13. The apparatus of claim 9 , wherein the curved portion of the end face is limited in transverse extent so as to suppress higher-order device optical modes.
14. The apparatus of claim 9 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
15. The apparatus of claim 9 , wherein a proximal portion of the end-coupled waveguide includes a) waveguide cladding material between the device end face and a proximal end of the waveguide core, or b) waveguide core material on the device end face extending upward from the waveguide core away from the substrate.
16. The apparatus of claim 9 , further comprising an optical coating formed between the device end face and the end-coupled waveguide.
17. The apparatus of claim 9 , wherein the end-coupled waveguide includes a dual-core segment.
18. The apparatus of claim 9 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
19. An optical apparatus, comprising:
a semiconductor device substrate;
a semiconductor optical device formed on the device substrate and including a device waveguide segment terminating at a device end face; and
an end-coupled planar optical waveguide formed on the device substrate at the device end face and end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide including a waveguide core and waveguide cladding,
wherein:
the device end face includes an outwardly protruding portion extending along the substrate from a bottom portion of the device end face beneath a proximal portion of the end-coupled waveguide; and
at least one layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing layer thickness together yielding a desired layer surface profile for at least one layer of the end-coupled waveguide.
20. The apparatus of claim 19 , wherein a lower cladding layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing lower cladding layer thickness together yielding a substantially flat upper surface of the lower cladding layer above the protruding portion of the device waveguide.
21. The apparatus of claim 19 , wherein a lower cladding layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing lower cladding layer thickness together serving to position a proximal end of a core of the end-coupled waveguide for optical end-coupling with the optical device.
22. The apparatus of claim 19 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
23. The apparatus of claim 19 , wherein a proximal portion of the end-coupled waveguide includes a) waveguide cladding material between the device end face and a proximal end of the waveguide core, or b) waveguide core material on the device end face extending upward from the waveguide core away from the substrate.
24. The apparatus of claim 19 , further comprising an optical coating formed between the device end face and the end-coupled waveguide.
25. The apparatus of claim 19 , wherein the end-coupled waveguide includes a dual-core segment.
26. The apparatus of claim 19 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
27. A method, comprising:
forming a semiconductor optical device on a device substrate, the optical device including a device waveguide segment terminating at a device end face;
depositing waveguide cladding material on the substrate so as to form a waveguide lower cladding layer;
depositing waveguide core material over the lower cladding layer so as to form a waveguide core;
depositing waveguide cladding material over the waveguide core material and the lower cladding layer so as to form a waveguide upper cladding layer, thereby forming an end-coupled planar optical waveguide on the device substrate end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide comprising the lower cladding layer, the waveguide core, and the upper cladding layer; and
forming a reflective coating between the device substrate and at least a portion of the end-coupled waveguide.
28. The method of claim 27 , wherein the reflective coating comprises a metallic coating.
29. The method of claim 27 , wherein the reflective coating comprises a dielectric coating.
30. The method of claim 27 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
31. The method of claim 27 , wherein:
the deposited cladding material substantially covers the device end face; and
the deposited waveguide core material extends upward from a proximal end of the waveguide core away from the substrate.
32. The method of claim 27 , further comprising forming an optical coating between the device end face and the end-coupled waveguide.
33. The method of claim 27 , wherein the end-coupled waveguide includes a dual-core segment.
34. The method of claim 27 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
35. The method of claim 27 , wherein multiple optical devices are formed concurrently on a common device substrate wafer, and multiple corresponding end-coupled waveguides are formed concurrently on the common substrate wafer, and further comprising dividing the common substrate wafer into multiple device substrates.
36. A method, comprising:
forming a semiconductor optical device on a device substrate, the optical device including a device waveguide segment terminating at a device end face;
depositing waveguide cladding material on the substrate so as to form a waveguide lower cladding layer;
depositing waveguide core material over the lower cladding layer so as to form a waveguide core; and
depositing waveguide cladding material over the waveguide core material and the lower cladding layer so as to form a waveguide upper cladding layer, thereby forming an end-coupled planar optical waveguide on the device substrate end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide comprising the lower cladding layer, waveguide core, and the upper cladding layer,
wherein at least a portion of the device end face is curved in the horizontal dimension.
37. The method of claim 36 , wherein the curved portion of the end face is convex.
38. The method of claim 36 , wherein the curved portion of the end face serves to increase reflective optical coupling of a device optical mode back into the device waveguide segment, relative to a substantially flat device end face.
39. The method of claim 36 , wherein the curved portion of the end face serves to increase optical end-coupling between the device waveguide segment and the end-coupled waveguide, relative to a substantially flat device end face.
40. The method of claim 36 , wherein the curved portion of the end face is limited in transverse extent so as to suppress higher-order device optical modes.
41. The method of claim 36 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
42. The method of claim 36 , wherein:
the deposited cladding material substantially covers the device end face; and
the deposited waveguide core material extends upward from a proximal end of the waveguide core away from the substrate.
43. The method of claim 36 , further comprising forming an optical coating between the device end face and the end-coupled waveguide.
44. The method of claim 36 , wherein the end-coupled waveguide includes a dual-core segment.
45. The method of claim 36 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
46. The method of claim 36 , wherein multiple optical devices are formed concurrently on a common device substrate wafer, and multiple corresponding end-coupled waveguides are formed concurrently on the common substrate wafer, and further comprising dividing the common substrate wafer into multiple device substrates.
47. A method, comprising:
forming a semiconductor optical device on a device substrate, the optical device including a device waveguide segment terminating at a device end face;
depositing waveguide cladding material on the substrate so as to form a waveguide lower cladding layer;
depositing waveguide core material over the lower cladding layer so as to form a waveguide core; and
depositing waveguide cladding material over the waveguide core material and the lower cladding layer so as to form a waveguide upper cladding layer, thereby forming an end-coupled planar optical waveguide on the device substrate end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide comprising the lower cladding layer, waveguide core, and the upper cladding layer,
wherein:
the device end face includes an outwardly protruding portion extending along the substrate from a bottom portion of the device end face beneath a proximal portion of the end-coupled waveguide; and
at least one layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing layer thickness together yielding a desired layer surface profile for at least one layer of the end-coupled waveguide.
48. The method of claim 47 , wherein a lower cladding layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing lower cladding layer thickness together yielding a substantially flat upper surface of the lower cladding layer above the protruding portion of the device waveguide.
49. The method of claim 47 , wherein a lower cladding layer of the end-coupled waveguide decreases in thickness toward the end face, the outwardly protruding portion of the device waveguide and the decreasing lower cladding layer thickness together serving to position a proximal end of a core of the end-coupled waveguide for optical end-coupling with the optical device.
50. The method of claim 47 , wherein the end-coupled waveguide comprises a low-index planar optical waveguide.
51. The method of claim 47 , wherein:
the deposited cladding material substantially covers the device end face; and
the deposited waveguide core material extends upward from a proximal end of the waveguide core away from the substrate.
52. The method of claim 47 , further comprising forming an optical coating between the device end face and the end-coupled waveguide.
53. The method of claim 47 , wherein the end-coupled waveguide includes a dual-core segment.
54. The method of claim 47 , wherein the device end face is non-normal with respect to optical propagation along the device waveguide segment.
55. The method of claim 47 , wherein multiple optical devices are formed concurrently on a common device substrate wafer, and multiple corresponding end-coupled waveguides are formed concurrently on the common substrate wafer, and further comprising dividing the common substrate wafer into multiple device substrates.
56. A method, comprising:
forming a semiconductor optical device on a device substrate, the optical device including a device waveguide segment terminating at a device end face;
depositing waveguide cladding material on the substrate and the device end face so that the cladding material substantially covers the device end face and forms a waveguide lower cladding layer;
masking the lower cladding layer, leaving unmasked that portion of the waveguide cladding material covering the device end face;
forming a substantially flat upper surface of the lower cladding layer and exposing an upper portion of the device end face by removing the unmasked portion of the waveguide cladding material until it is about the same thickness as the lower cladding layer and thereby forms a portion thereof;
de-masking the lower cladding layer;
after de-masking the lower cladding layer, depositing waveguide core material over the lower cladding layer so as to form a waveguide core; and
depositing waveguide cladding material over the waveguide core material and lower cladding layer so as to form a waveguide upper cladding layer,
wherein:
the lower cladding layer, the waveguide core, and the upper cladding layer form an end-coupled planar optical waveguide on the device substrate end-coupled at its proximal end to the device waveguide through the device end face;
deposited waveguide core material extends upward from a proximal end of the waveguide core away from the substrate; and
the upward-extending waveguide core material at the proximal end of the waveguide core is deposited on the exposed upper portion of the device end face.
57. The method of claim 56 , wherein multiple optical devices are formed concurrently on a common device substrate wafer, and multiple corresponding end-coupled waveguides are formed concurrently on the common substrate wafer, and further comprising dividing the common substrate wafer into multiple device substrates.
58. A method, comprising:
forming a semiconductor optical device on a device substrate, the optical device including a device waveguide segment terminating at a device end face;
depositing waveguide cladding material on the substrate and the device end face so that the cladding material substantially covers the device end face, the waveguide cladding material deposited on the device substrate and on the device end face being at least as thick as the device waveguide segment;
forming a substantially flat waveguide cladding material upper surface substantially flush with an upper surface of the device waveguide segment by removing waveguide cladding material by chemical-mechanical polishing;
forming a substantially flat lower cladding layer and exposing an upper portion of the device end face by removing waveguide cladding material by cladding-material-specific etching,
depositing waveguide core material over the lower cladding layer so as to form a waveguide core, deposited waveguide core material extending upward from a proximal end of the waveguide core away from the substrate; and
depositing waveguide cladding material over the waveguide core material and lower cladding layer so as to form a waveguide upper cladding layer,
wherein:
the lower cladding layer, the waveguide core, and the upper cladding layer form an end-coupled planar optical waveguide on the device substrate end-coupled at its proximal end to the device waveguide through the device end face;
deposited waveguide core material extends upward from a proximal end of the waveguide core away from the substrate; and
the upward-extending waveguide core material at the proximal end of the waveguide core is deposited on the exposed upper portion of the device end face.
59. The method of claim 58 , wherein multiple optical devices are formed concurrently on a common device substrate wafer, and multiple corresponding end-coupled waveguides are formed concurrently on the common substrate wafer, and further comprising dividing the common substrate wafer into multiple device substrates.
60. An optical apparatus, comprising:
a semiconductor device substrate;
a semiconductor optical device formed on the device substrate and including a device waveguide segment terminating at a device end face; and
an end-coupled planar optical waveguide formed on the device substrate at the device end face and end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide including a waveguide core and waveguide cladding,
wherein:
the proximal portion of the end-coupled waveguide includes waveguide cladding material between the device end face and the proximal end of the waveguide core;
the waveguide cladding material between the device end face and the proximal end of the waveguide core forms a multimode waveguide segment; and
the waveguide core supports an optical mode substantially spatial-mode-matched with an optical mode supported by the device waveguide segment, and the length of the multimode waveguide segment is chosen so as to result in substantially spatial-mode-matched end-coupling between the device waveguide segment and the portion of the end-coupled waveguide that includes the waveguide core.
61. An optical apparatus, comprising:
a semiconductor device substrate;
a semiconductor optical device formed on the device substrate and including a device waveguide segment terminating at a device end face; and
an end-coupled planar optical waveguide formed on the device substrate at the device end face and end-coupled at its proximal end to the device waveguide through the device end face, the end-coupled waveguide including a waveguide core and waveguide cladding,
wherein:
the proximal portion of the end-coupled waveguide includes waveguide cladding material between the device end face and the proximal end of the waveguide core;
the waveguide cladding material between the device end face and the proximal end of the waveguide core forms a multimode waveguide segment; and
the waveguide core supports an optical mode larger than an optical mode supported by the device waveguide segment, and the length of the multimode waveguide segment is chosen so that it functions as a mode expander for end-coupling the device waveguide segment and the end-coupled waveguide.