Image sensor and manufacturing method thereof
View Patent ↗An image sensor has a three-dimensional structure in which a sensor element array having a plurality of sensor elements consisting of CdTe, arranged in a two-dimensional matrix, is mounted to an IC substrate via a connection layer. The connection layer has a plurality of stud bumps and a plurality of thin film layers. The stud bumps are formed on an electrode of each IC and are provided in the connection layer in order to fetch a signal detected by each sensor element. The thin film layers are formed at the distal end of each stud bump, and are electrically connected with an electrode of each sensor element.
1. An image sensor comprising:
a sensor element array having a plurality of sensor elements arrayed in a two-dimensional matrix;
an IC substrate laminating said sensor element array and provided with a plurality of ICs configured to amplify an electric signal based on radiation incident on any of the plurality of said sensor elements;
a plurality of multi-layer stud bumps formed on an electrode of each of the plurality of said ICs and electrically connecting each electrode of said sensor elements with each electrode of said ICs; and
a plurality of thin film layers formed at the distal end of each of the plurality of said multi-layer stud bumps and electrically connected with the electrode of each of the plurality of said sensor elements.
2. The image sensor according to claim 1 , wherein each of said multi-layer stud bumps comprises gold.
3. The image sensor according to claim 1 , wherein each of said thin film layers comprises indium.
4. The image sensor according to claim 1 , further comprising an insulating layer covering said multi-layer stud bumps and said thin film layers.
5. The image sensor according to claim 1 , wherein said sensor element comprises a CdTe element.
6. An image sensor comprising:
a sensor element array having a plurality of sensor elements arrayed in a two-dimensional matrix,
an IC substrate laminating said sensor element array and provided with a plurality of ICs configured to amplify an electric signal based on radiation incident on any of the plurality of said sensor elements;
a plurality of multi-layer bumps, each comprising an at least two-layer bump, the plurality of multi-layer bumps laminated on an electrode of each of the plurality of said ICs, the multi-layer bumps electrically connecting each electrode of said sensor elements with each electrode of said ICs; and
a plurality of thin film layers formed at the distal end of said multi-layer bump and electrically connected with the electrode of each of the plurality of said sensor elements.
7. The image sensor according to claim 6 , wherein each of said multi-layer bumps comprises gold.
8. The image sensor according to claim 6 , wherein each of said thin film layers comprises indium.
9. The image sensor according to claim 6 , further comprising an insulating layer covering said bumps and said thin film layers.
10. The image sensor according to claim 6 , wherein said sensor element comprises a CdTe element.