Method for manufacturing semiconductor device
A mask layer having an opening is formed on a semiconductor substrate. Next, oxygen ions and a first impurity are implanted into the semiconductor substrate using the mask layer as a mask. Then, the mask layer is removed. Next, the oxygen ions are heat treated to react and form an oxide film on the region where the first impurity has been implanted. Then, the oxide film is removed to form a depression in the semiconductor substrate. Next, a gate insulating film and a gate electrode are formed on the depression. Then a second impurity is implanted into the surface of the semiconductor substrate to form a source/drain. An impurity lighter than the oxygen ions and the second impurity is used as the first impurity.
1. A method for manufacturing a semiconductor device comprising:
forming a mask layer having an opening on a semiconductor substrate;
implanting oxygen ions and a first impurity into the semiconductor substrate using the mask layer as a mask;
removing the mask layer;
heat treating so the oxygen ions react to form an oxide film on the region where the first impurity is implanted;
removing the oxide film to form a depression in the semiconductor substrate;
forming a gate insulating film and a gate electrode on the depression; and
implanting a second impurity into the surface of the semiconductor substrate to form source/drain regions, wherein an impurity lighter than the oxygen ions and the second impurity is used as the first impurity.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein one of hydrogen and helium is used as the first impurity.
3. The method for manufacturing a semiconductor device according to claim 1 , including forming the depression to be deeper than the source/drain regions.
4. The method for manufacturing a semiconductor device according to claim 1 , including implanting the first impurity at an accelerating voltage not exceeding 10 keV.
5. The method for manufacturing a semiconductor device according to claim 1 , including removing the oxide film with hydrofluoric acid.
6. A method for manufacturing a semiconductor device comprising:
forming a first mask layer having a first opening on a semiconductor substrate;
implanting a first impurity into the semiconductor substrate using the first mask layer as a mask;
removing the first mask layer;
forming a second mask layer having a second opening smaller than the first opening, in the region where the first opening was located, on the semiconductor substrate;
implanting oxygen ions into the semiconductor substrate using the second mask layer as a mask;
removing the second mask layer;
heat treating so the oxygen ions react to form an oxide film on the region where the first impurity is implanted;
removing the oxide film to form a depression in the semiconductor substrate;
forming a gate insulating film and a gate electrode on the depression; and
implanting a second impurity into the surface of the semiconductor substrate to form source/drain regions, wherein an impurity lighter than the oxygen ions and the second impurity is used as the first impurity.
7. The method for manufacturing a semiconductor device according to claim 6 , wherein one of hydrogen and helium is used as the first impurity.
8. The method for manufacturing a semiconductor device according to claim 6 , including forming the depression to be deeper than the source/drain regions.
9. The method for manufacturing a semiconductor device according to claim 6 , including implanting the first impurity at an accelerating voltage not exceeding 10 keV.
10. The method for manufacturing a semiconductor device according to claim 6 , including removing the oxide film with hydrofluoric acid.
11. A method for manufacturing a semiconductor device comprising:
forming a mask layer having an opening on a semiconductor substrate;
implanting a first impurity into the semiconductor substrate using the mask layer as a mask;
removing the mask layer;
heat treating in an oxygen-containing atmosphere to form an oxide film on the region where the first impurity is implanted;
removing the oxide film to form a depression in the semiconductor substrate;
forming a gate insulating film and a gate electrode on the depression; and
implanting a second impurity into the surface of the semiconductor substrate to form source/drain regions, wherein an impurity lighter than the oxygen ions and the second impurity is used as the first impurity.
12. The method for manufacturing a semiconductor device according to claim 11 , wherein one of hydrogen and helium is used as the first impurity.
13. The method for manufacturing a semiconductor device according to claim 11 , including forming the depression to be deeper than the source/drain regions.
14. The method for manufacturing a semiconductor device according to claim 11 , including implanting the first impurity at an accelerating voltage not exceeding 10 keV.
15. The method for manufacturing a semiconductor device according to claim 11 , including removing the oxide film with hydrofluoric acid.
16. A method for manufacturing a semiconductor device comprising:
forming a mask layer having an opening on a semiconductor substrate;
implanting a first impurity into the semiconductor substrate using the mask layer as a mask;
removing the mask layer;
removing the region where the first impurity was implanted to form a depression in the semiconductor substrate;
forming a gate insulating film and a gate electrode on the depression; and
implanting a second impurity into the surface of the semiconductor substrate to form source/drain regions, wherein an impurity lighter than the second impurity is used as the first impurity.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein one of hydrogen and helium is used as the first impurity.
18. The method for manufacturing a semiconductor device according to claim 16 , including forming the depression to be deeper than the source/drain regions.
19. The method for manufacturing a semiconductor device according to claim 16 , including implanting the first impurity at an accelerating voltage not exceeding 10 keV.
20. The method for manufacturing a semiconductor device according to claim 16 , including using hydrofluoric acid to remove the region where the first impurity was implanted.