Increased mobility from organic semiconducting polymers field-effect transistors
View Patent ↗Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO 2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.
1. A process for constructing an organic field effect transistor, comprising the steps of:
a) providing a substrate having a gate electrode;
b) providing the substrate with source and drain electrodes; and
c) providing upon the substrate directly from solution, a layer of regioregular, head-to-tail poly 3-hexylthiophene semiconducting polymer, characterized in that said transistor has a high mobility correlating to an improved structural order of the semiconducting polymer layer, said layer having the improved structural order demonstrated by an absorbance of a 0—0 absorption band in an optical spectrum.
2. The process of claim 1 , further comprising the step of: d) heat treating the layered substrate at about 150° C. to 170° C. for about three minutes in an inert atmosphere.
3. The process of claim 1 , wherein the layer is about 20 Å to 1 μm.
4. The process of claim 1 , wherein the mobility is about 0.2 cm 2 V −1 s −1 .
5. The process of claim 1 , wherein the layer of semiconducting polymer is provided upon the substrate by dip-coating.
6. The process of claim 1 , wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene.
7. A process for constructing an organic field effect transistor, comprising the steps of:
a) providing a substrate having a gate electrode;
b) providing the substrate with source and drain electrodes; and
c) depositing upon the substrate directly from solution, a layer of semiconducting regioregular head-to-tail poly 3-hexylthiophene, characterized in that said transistor has a high mobility of about 0.2 cm 2 V −1 s −1 correlating to an improved structural order of the regioregular head-to-tail poly 3-hexylthiophene layer, said layer having the improved structural order demonstrated by an absorbance of a 0—0 absorption band in an optical spectrum, wherein the 0-0 absorption band is greater than about 86% of that of a maximum absorbance for regioregular poly 3-hexylthiophene; and
d) heat treating the layered substrate at about 150° C. to 170° C. for about three minutes in an inert atmosphere.
8. The process of claim 7 , wherein the layer is about 20 Å to 1 μm.
9. A field effect transistor fabricated from the process of claim 1 .