Adaptive manufacturing for film bulk acoustic wave resonators
View Patent ↗An adaptive manufacturing process for a Film Bulk Acoustic Resonator (FBAR) tests the FBAR circuit during manufacturing to determine a resonant frequency thereof. Reactive tuning elements may be adjusted as needed depending on the testing to change the resonant frequency to a desired resonant frequency. In an exemplary embodiment, predetermined masks may be applied to modify the tuning elements.
1. A method of manufacturing an FBAR, comprising:
creating an FBAR on a wafer;
testing the FBAR to determine a resonant frequency;
coupling at least one reactive element to the FBAR on the wafer to tune the resonant frequency; and
modifying the at least one reactive element to create a desired resonant frequency.
2. The method of claim 1 , wherein testing the FBAR comprises testing the FBAR on-wafer.
3. The method of claim 1 , wherein coupling at least one reactive element to the FBAR comprises coupling at least a capacitor to the FBAR.
4. The method of claim 1 , wherein coupling at least one reactive element to the FBAR comprises coupling at least an inductor to the FBAR.
5. The method of claim 1 , wherein modifying the at least one reactive element comprises applying a mask to the at least one reactive element.
6. The method of claim 1 , further comprising binning the FBAR into one of a plurality of bins based on the results of the testing step.
7. The method of claim 1 , wherein modifying the at least one reactive element comprises connecting two segments of a capacitor.
8. The method of claim 1 , wherein modifying the at least one reactive element comprises shorting turns in an inductor.
9. An adaptive semiconductor manufacturing process comprising:
initiating fabrication of a semiconductor device incorporating an FBAR circuit;
during fabrication, testing operation of the FBAR circuit;
based on the testing step, determining a parameter of the FBAR circuit that is a function of the manufacturing process;
modifying the FBAR circuit design based on the parameter by selectively adding at least a component to the FBAR circuit design; and
finalizing fabrication of the semiconductor device.
10. The process of claim 9 , wherein the testing step includes electrically testing at least a portion of the circuit design and taking measurements from which the parameter may be determined.
11. The process of claim 9 , wherein the modifying step includes selectively making at least one connection within the circuit design based on the parameter.
12. The process of claim 9 , wherein the modifying step includes selectively adding a plurality of components to the FBAR circuit design based on the parameter.
13. The process of claim 9 , wherein the parameter is a frequency response.
14. An adaptive semiconductor manufacturing process, comprising:
initiating fabrication of a design in a semiconductor circuit having an FBAR circuit therein, the semiconductor circuit having a plurality of selectable configurations wherein each configuration corresponds to a variation in a parameter value imposed by materials used to manufacture the semiconductor circuit or by the manufacturing process itself;
during fabrication, testing a portion of the design bearing on the parameter value;
during fabrication, selecting one of the configurations to implement in the semiconductor circuit; and
implementing the selected configuration of the design in the semiconductor.