Surface acoustic wave device and communication apparatus using the same
IDT electrodes are arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave whereas reflectors are each interposed between a respective pair of IDT electrodes, the reflectors each including four or more electrode fingers extended perpendicularly to the propagation direction. An electrode-finger pitch ‘a’ of the reflector is progressively decreased from the opposite ends of the reflector toward the center thereof. Frequencies allowed to pass through a pass band may be controlled by varying the electrode-finger pitch. Thus is provided a surface acoustic wave device featuring a wide-band transmission performance.
1. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
said resonator-type electrode pattern comprising: a plurality of IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave,
said reflector including four or more electrode fingers extended perpendicularly to said propagation direction of the surface acoustic wave and arranged with an electrode-finger pitch progressively decreased from the opposite ends of the reflector toward the center thereof
wherein the maximum value of the electrode-finger pitch of said reflector is smaller than an average value of an electrode-finger pitch of said pair of IDT electrodes adjoining the reflector.
2. A communication apparatus comprising at least one of or both of a receiver circuit and a transmitter circuit including the surface acoustic wave device according to claim 1 .
3. A surface acoustic wave device according to claim 1 , wherein said reflector and a bus bar of at least one of said pairs of IDT electrodes in adjoining relation therewith with respect to said propagation direction are electrically interconnected.
4. A surface acoustic wave device according to claim 1 , wherein one or more different resonator-type electrode patterns for mode resonance generation are added in series or in parallel to said resonator-type electrode pattern.
5. A surface acoustic wave device according to claim 1 , wherein at least one of said pairs of IDT electrodes adjoining said reflector has an electrode-finger pitch progressively decreased from a region away from said reflector toward said reflector.
6. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
said resonator-type electrode pattern comprising: a plurality of IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave,
said reflector including four or more electrode fingers extended perpendicularly to said propagation direction of the surface acoustic wave and arranged with an electrode-finger pitch progressively decreased from the opposite ends of the reflector toward the center thereof,
wherein at least one of said pairs of IDT electrodes adjoining said reflector has an electrode-finger pitch progressively decreased from a region away from said reflector toward said reflector,
wherein said reflectors are provided in a plural number whereas said IDT electrode is sandwiched between a pair of reflectors, said IDT electrode having the electrode-finger pitch progressively decreased from the center thereof toward the opposite ends thereof.
7. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
said resonator-type electrode pattern comprising: a plurality of IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave,
said reflector including four or more electrode fingers extended perpendicularly to said propagation direction of the surface acoustic wave and arranged with an electrode-finger pitch progressively decreased from the opposite ends of the reflector toward the center thereof,
wherein at least one of said pairs of IDT electrodes adjoining said reflector bas an electrode-finger pitch progressively decreased from a region away from said reflector toward said reflector,
wherein as to said reflector and said IDT electrode in adjoining relation with respect to said propagation direction, an average value of the electrode-finger pitch of said IDT electrode is greater than the maximum value of the electrode-finger pitch of said reflector.
8. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
said resonator-type electrode pattern comprising: a plurality of IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave,
at least one of said pair of IDT electrodes adjoining said reflector having an electrode-finger pitch progressively decreased from a region away from said reflector toward said reflector
wherein said reflectors are provided in a plural number whereas said IDT electrode is sandwiched between a pair of reflectors, wherein said IDT electrode has the electrode-finger pitch progressively decreased from the center thereof toward the opposite ends thereof.
9. A surface acoustic wave device according to claim 8 , wherein one or more different resonator-type electrode patterns for mode resonance generation are added in series or in parallel to said resonator-type electrode pattern.
10. A communication apparatus comprising at least one of or both of a receiver circuit and a transmitter circuit including the surface acoustic wave device according to claim 8 .
11. A surface acoustic wave device according to claim 8 , wherein said reflector and a bus bar of said IDT electrode in adjoining relation therewith with respect to said propagation direction of the surface acoustic wave are electrically interconnected.
12. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
wherein said resonator-type electrode pattern comprises: five or more IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave and including four or more electrode fingers extended perpendicularly to said propagation direction,
wherein out of said five or more IDT electrodes, a central IDT electrodes and outermost IDT electrodes have an equal electrode-finger pitch, whereas an IDT electrode (hereinafter, referred to as “second IDT electrode”) between said central IDT electrode and said outermost IDT electrode has an electrode finger pitch which is smaller than an electrode-finger pitch of said central IDT electrode and said outermost IDT electrode and is progressively decreased from the opposite ends of said second IDT electrode toward the center thereof.
13. A communication apparatus comprising at least one of or both of a receiver circuit and a transmitter circuit including the surface acoustic wave device according to claim 12 .
14. A surface acoustic wave device according to claim 12 , wherein said reflector has an electrode-finger pitch progressively decreased from a region away from said second IDT electrode adjacent thereto toward said second IDT electrode.
15. A surface acoustic wave device according to claim 12 , wherein said outermost IDT electrodes have the electrode-finger pitch progressively decreased from a region away from said central IDT toward said central IDT.
16. A surface acoustic wave device according to claim 15 , wherein said central IDT electrode has the electrode-finger pitch progressively decreased from the center thereof toward the opposite ends thereof.
17. A surface acoustic wave device according to claim 15 , wherein the maximum value of the electrode-finger pitch of said second IDT electrode is smaller than an average value of the electrode-finger pitch of the reflector adjacent thereto.
18. A surface acoustic wave device according to claim 13 , wherein said reflector and a bus bar of at lest one of said pairs of IDT electrode in adjoining relation therewith with respect to the propagation direction of the surface acoustic wave are electrically interconnected.
19. A surface acoustic wave device according to claim 12 , wherein one or more different resonator-type electrode patterns for mode resonance generation are added in series or in parallel to said resonator-type electrode pattern.
20. A surface acoustic wave device having one or more stages of resonator-type electrode patterns arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, and input and output terminals connected to said resonator-type electrode pattern,
said resonator-type electrode pattern comprising: a plurality of IDT electrodes each including electrode fingers extended perpendicularly to the propagation direction of the surface acoustic wave; and a reflector interposed between a pair of IDT electrodes spaced from each other along said propagation direction of the surface acoustic wave,
at least one of said pair of IDT electrodes adjoining said reflector having an electrode-finger pitch progressively decreased from a region away from said reflector toward said reflector,
wherein as to said reflector and said IDT electrode in adjoining relation with respect to said propagation direction of the surface acoustic wave, an average value of the electrode-finger pitch of said IDT electrode is greater than the maximum value of an electrode-finger pitch of said reflector.
21. A surface acoustic wave device according to claim 20 , wherein said reflector and a bus bar of said IDT electrode in adjoining relation therewith with respect to said propagation direction of the surface acoustic wave are electrically interconnected.
22. A surface acoustic wave device according to claim 20 , wherein one or more different resonator-type electrode patterns for mode resonance generation are added in series or in parallel to said resonator-type electrode pattern.