IP Library Granted Patent US 7,153,546
Granted Patent B2
US 7,153,546 · App. 10/790,803 · Granted Dec 26, 2006

Perpendicular magnetic recording media, manufacturing process of the same, and magnetic storage apparatus using the same

Assignee: Hitachi Global Storage Technologies Japan, Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,153,546
App. No.
10/790,803
Granted
Dec 26, 2006
Kind
B2
Abstract

Provided are a double-layer perpendicular magnetic recording medium having a high medium S/N at an areal recording density of 50 Gbits or more per square inch, and a magnetic storage apparatus having excellent reliability with a low error rate. The perpendicular magnetic recording medium is formed by sequentially laminating a domain control layer, an amorphous soft magnetic underlayer, an intermediate layer, and a perpendicular recording layer on a substrate. The domain control layer is a triple-layer film formed by laminating a first polycrystalline soft magnetic layer, a disordered antiferromagnetic layer, and a second polycrystalline soft magnetic layer from a substrate side.

Claims (9)

1. A manufacturing process of a perpendicular magnetic recording medium comprising the steps of:

forming a disordered antiferromagnetic layer on a substrate;

forming a polycrystalline soft magnetic layer on the antiferromagnetic layer;

and forming an amorphous soft magnetic layer on the polycrystalline soft magnetic layer;

wherein said every steps are carried out while applying a magnetic field having a component parallel to a surface of the substrate.

2. The manufacturing process according to claim 1 , wherein the direction of the magnetic field having a component parallel to the surface of the substrate is substantially parallel to a radial direction of the substrate.

3. The manufacturing process according to claim 1 , further comprising:

forming another polycrystalline soft magnetic layer on the substrate prior to the step of forming the antiferromagnetic layer.

4. The manufacturing process according to claim 3 , wherein during the step of forming the disordered antiferromagnetic layer, an interlayer exchange coupling occurs between said another polycrystalline soft magnetic layer and the disordered antiferromagnetic layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2006
From: HITACHI, LTD.
To: HITACHI GLOBAL STORAGE TECHNOLOGIES JAPAN, LTD.
Reel/Frame 017666/0367 →
Priority Claims (1)
JP 2001-143637 · May 14, 2001 · national
Continuity (2)
Continuation 1007665500 · Feb 19, 2002
Related Publication 20040170798A1 · Sep 2, 2004