Organic electroluminescence display device and method for fabricating the same
The present invention relates to a thin film transistor for easily displaying gradation of an organic electroluminescence display device and a fabrication method of the thin film transistor, and an organic electroluminescence display device using the thin film transistor. The present invention provides an organic electroluminescence display device comprising a thin film transistor; a protection film and an organic light-emitting device electrically connected to the thin film transistor, wherein an S-factor of the thin film transistor is 0.35 V/dec or more.
1. An organic electroluminescence display device, comprising:
an insulating substrate;
a thin film transistor formed on the insulating substrate, comprising:
an active layer equipped with a source region and a drain region;
a gate electrode; and
a source electrode and a drain electrode electrically coupled to the source region and the drain region;
a protection film formed on the insulating substrate having the thin film transistor and equipped with a via hole for exposing a part of the source electrode or the drain electrode; and
an organic light-emitting device electrically coupled to the thin film transistor through the via hole,
wherein an S-factor of the thin film transistor is 0.4 V/dec or more, and a charge mobility of the thin film transistor is in a range of 85 cm 2 /Vs to 96 cm 2 /Vs.
2. The organic electroluminescence display device of claim 1 , wherein the S-factor of the thin film transistor is 0.4 to 0.6 V/dec.
3. The organic electroluminescence display device of claim 1 , wherein the protection film comprises an inorganic insulating material containing hydrogen.
4. The organic electroluminescence display device of claim 3 , wherein the inorganic insulating material containing hydrogen is comprised of SiNx containing hydrogen.
5. A method for fabricating an organic electroluminescence display device, comprising:
forming a thin film transistor comprising an active layer having a source region and a drain region on an insulating substrate, a gate electrode, and a source electrode and a drain electrode coupled to the source region and the drain region;
forming a protection film on the insulating substrate having the thin film transistor; and
heat-treating the insulating substrate with the protection film formed thereon,
wherein an S-factor of the thin film transistor after heat treatment is 0.4 V/dec or more, and a charge mobility of the thin film transistor is in a range of 85 cm 2 /Vs to 96 cm 2 /Vs.
6. The method of claim 5 , wherein the S-factor of the thin film transistor after heat treatment is 0.4 to 0.6 V/dec.
7. The method of claim 5 , wherein the protection film comprises an inorganic insulating material containing hydrogen.
8. The method of claim 7 , wherein the protection film is formed with SiNx containing hydrogen.
9. The method of claim 5 , wherein the heat treating is performed at a temperature of about 350° C. or less for about 3 hours.
10. The method of claim 9 , wherein the heat treating is performed at a temperature in the range of about 300 to about 350° C. for about 3 hours.
11. An organic electroluminescence display device, comprising:
an insulating substrate;
a thin film transistor formed on the insulating substrate, comprising:
an active layer equipped with a source region and a drain region;
a gate electrode; and
a source electrode and a drain electrode electrically coupled to the source region and the drain region;
a protection film formed on the insulating substrate having the thin film transistor and equipped with a via hole for exposing a part of the source electrode or the drain electrode; and
an organic light-emitting device electrically coupled to the thin film transistor through the via hole,
wherein an S-factor of the thin film transistor is 0.35 V/dec or more, and a charge mobility of the thin film transistor is in a range of 85 cm 2 /Vs to 96 cm 2 /Vs.
12. The organic electroluminescence display device of claim 11 , wherein the S-factor of the thin film transistor is 0.35 to 0.6 V/dec.
13. The organic electroluminescence display device of claim 11 , wherein the protection film comprises an inorganic insulating material containing hydrogen.
14. The organic electroluminescence display device of claim 13 , wherein the inorganic insulating material containing hydrogen is comprised of SiNx containing hydrogen.