ISFET using PbTiO
View Patent ↗A PbTiO 3 /SiO 2 -gated ISFET device comprising a PbTiO 3 thin film as H + -sensing film, and a method of forming the same. The PbTiO 3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO 3 /SiO 2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
1. A PbTiO3/SiO2 gated ISFET device, comprising:
a semiconductor substrate;
a gate oxide layer on the semiconductor substrate;
a PbTiO 3 layer directly contacting the gate oxide layer to form a PbTiO 3 gate;
a pair of source/drain regions in the semiconductor substrate oppositely adjacent to the PbTiO 3 gate;
a pair of metal wires on the source/drain regions; and
a sealing layer overlying the metal wire, and exposing the PbTiO3 layer,
wherein a top surface of the PbTiO 3 layer is exposed.
2. The device as claimed in claim 1 , wherein the width of the channel, the length of the channel and the ratio of width/length of the channel of the ISFET is about 1000 μm, 50 μm, and 20 respectively.
3. The device as claimed in claim 1 , wherein the semiconductor substrate is P-type.
4. The device as claimed in claim 1 , wherein the resistivity of the semiconductor substrate ranges from 8 to 12 Ω·cm.
5. The device as claimed in claim 1 , wherein the lattice parameter of the semiconductor is (1,0,0).
6. The device as claimed in claim 1 , wherein the thickness of the gate oxide is about 1000 Å.
7. The device as claimed in claim 1 , wherein the metal wire comprises aluminum.
8. The device as claimed in claim 1 , wherein the sealing layer comprises epoxide resin.
9. The device as claimed in claim 1 , wherein the source/drain is N-type.
10. The device as claimed in claim 1 , wherein the PbTiO 3 layer is formed on the gate oxide layer by spin coating.
11. The device as claimed in claim 10 , wherein the N-type impurities within the source/drain regions comprise phosphorous.
12. The device as claimed in claim 1 , wherein the PbTiO 3 layer directly contacts the entire gate oxide layer.
13. The device as claimed in claim 1 , wherein the PbTiO 3 gate consists of the gate oxide layer and the PbTiO 3 layer, in which the PbTiO 3 layer servers as a gate electrode.
14. The device as claimed in claim 1 , wherein the top surface of the PbTiO3 layer is exposed to a solution to detect ions therein.