IP Library Granted Patent US 7,192,899
Granted Patent B2
US 7,192,899 · App. 11/350,020 · Granted Mar 20, 2007

Silicon nitride sintered body having high heat conductivity and silicon nitride structural element

Assignees: Kabushiki Kaisha Toshiba; Toshiba Materials Co., Ltd.
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Quick Facts
Patent No.
US 7,192,899
App. No.
11/350,020
Granted
Mar 20, 2007
Kind
B2
Abstract

A silicon nitride sintered body exhibiting a high heat conductivity, the silicon nitride sintered body includes a rare earth element in an amount of 2 to 17.5 mass % in terms of the oxide thereof, Fe in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Ca in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Al in an amount of 0.1 to 0.6 mass % in terms of the oxide thereof, Mg in an amount of 0.3 to 4 mass % in terms of the oxide thereof, and Hf in an amount not larger than 5 mass % (including 0 mass %) in terms of the oxide thereof.

Claims (13)

1. A silicon nitride sintered body exhibiting a high heat conductivity, the silicon nitride sintered body containing a rare earth element in an amount of 2 to 17.5 mass % in terms of the oxide thereof, Fe in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Ca in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Al in an amount of 0.1 to 0.6 mass % in terms of the oxide thereof, Mg in an amount of 0.3 to 4 mass % in terms of the oxide thereof, and Hf in an amount not larger than 5 mass % (including 0 mass %) in terms of the oxide thereof.

2. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , which has a heat conductivity not lower than 65 W/m·K, and a three point bending strength at room temperature not lower than 700 MPa, and has a porosity not higher than 2 volume %.

3. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein a deterioration rate of a room temperature strength after an oxidizing treatment for 1000 hours within a stationary air of 800 to 1,000° C. is not higher than 10%.

4. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , which comprises a crystalline grain boundary phase in an amount of not smaller than 20% of a grain boundary phase.

5. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , which comprises a grain boundary phase containing a compound having a rare earth element, Si, Al, Fe, Ca, Mg and O and/or a compound having a rare earth element, Si, Al, Fe, Ca, Mg, O and N.

6. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 5 , wherein the rare earth element is at least one kind of element selected from the group consisting of Y, Er and Yb.

7. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein the rare earth element is contained in the silicon nitride sintered body in an amount of 3 to 12.5 mass % in terms of the oxide thereof.

8. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein Fe is contained in the silicon nitride sintered body in an amount of 0.07 to 0.45 mass % in terms of the oxide thereof.

9. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein Ca is contained in the silicon nitride sintered body in an amount of 0.07 to 0.45 mass % in terms of the oxide thereof.

10. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein Al is contained in the silicon nitride sintered body in an amount of 0.1 to 0.4 mass % in terms of the oxide thereof.

11. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein Mg is contained in the silicon nitride sintered body in an amount of 0.5 to 3 mass % in terms of the oxide thereof.

12. The silicon nitride sintered body exhibiting a high heat conductivity according to claim 1 , wherein Hf is contained in the silicon nitride sintered body in an amount of 0.2 to 5 mass % in terms of the oxide thereof.

13. A silicon nitride structural element comprising a silicon nitride sintered body exhibiting a high heat conductivity, the silicon nitride sintered body containing a rare earth element in an amount of 2 to 17.5 mass % in terms of the oxide thereof, Fe in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Ca in an amount of 0.07 to 0.5 mass % in terms of the oxide thereof, Al in an amount of 0.1 to 0.6 mass % in terms of the oxide thereof, Mg in an amount of 0.3 to 4 mass % in terms of the oxide thereof, and Hf in an amount not larger than 5 mass % (including 0 mass %) in terms of the oxide thereof.

Assignments (4)
NUNC PRO TUNC ASSIGNMENT Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MATERIALS CO. LTD.
Reel/Frame 074940/0511 →
CHANGE OF NAME Recorded Feb 19, 2026
From: TOSHIBA MATERIALS CO. LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 074941/0803 →
CHANGE OF ADDRESS Recorded Feb 19, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 074941/0846 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 9, 2006
From: KOMATSU, MICHIYASU
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 017551/0273 →
Priority Claims (1)
JP 2004-150572 · May 20, 2004 · national
Continuity (2)
Continuation PCTJP0500912700 · May 19, 2005
Related Publication 20060128552A1 · Jun 15, 2006