Active matrix substrate and manufacturing method thereof, electric optical device and electronic device

1. A method of manufacturing an active matrix substrate having a driver circuit including thin film transistors that are arranged corresponding to respective cross points of a plurality of operation line films and a plurality of signal line films arranged in matrix, comprising:

a substrate wiring formation step that forms, on a first substrate, laminated wiring including a feed line film for supplying the driver circuit with current, a signal line film for supplying the driver circuit with a level signal for setting magnitude of the current, and an operation line film for supplying the driver circuit with an operation instruction signal for instructing whether to supply the current;

a circuit thin film formation step that transferably forms a circuit thin film carrying the driver circuit on a second substrate; and

a circuit thin film transfer step that transfers the circuit thin film from the second substrate to the first substrate and connects the circuit thin film with the laminated wiring:

wherein the substrate wiring formation step forms the laminated wiring so that the feed line film constitutes an upper layer among the feed line film, the signal line film, and the operation line film.

2. The method of manufacturing an active matrix substrate as set forth in claim 1 ,

wherein the circuit thin film formation step includes a step that forms a delamination layer that exists between the second substrate and the circuit thin film and has a characteristic that generates a state change due to energy application and weakens adherence with the circuit thin film.

3. The method of manufacturing an active matrix substrate as set forth in claim 2 ,

wherein the circuit thin film formation step includes a step that forms an intermediate layer between the second substrate and the delamination layer.

4. The method of manufacturing an active matrix substrate as set forth in claim 2 ,

wherein the circuit thin film formation step includes a step that removes part of the circuit thin film and part of the delamination layer so that a plurality of circuit chips can be arranged on the second substrate at an equal pitch when the circuit thin film is separated into the respective plurality of circuit chips.

5. The method of manufacturing an active matrix substrate as set forth in claim 4 ,

wherein, in the circuit thin film formation step, the delamination layer is overetched so that the adhesive area of the respective circuit chips of the delamination layer becomes smaller than the entire area of the delamination layer joint surface of the respective circuit chips to be transferred onto the first substrate.

6. The method of manufacturing an active matrix substrate as set forth in claim 4 ,

wherein in the circuit thin film formation step, when the circuit thin film is separated into a plurality of circuit chips, only part of the circuit thin film is removed, and the delamination layer remains as-is.

7. The method of manufacturing an active matrix substrate as set forth in claim 1 ,

wherein the circuit thin film transfer step includes a step that selectively transfers only the circuit chips to be transferred onto the first substrate from the second substrate.

8. The method of manufacturing an active matrix substrate as set forth in claim 7 ,

wherein in the circuit thin film transfer step, when the circuit chips are transferred onto the first substrate from the second substrate, the circuit and the first substrate chips are coupled via an adhesive layer, having conductivity, formed on the first substrate.

9. The method of manufacturing an active matrix substrate as set forth in claim 8 ,

wherein in the circuit thin film transfer step, the adhesive layer with conductivity is formed on the first substrate corresponding to a transfer position of the circuit chips to be transferred.

10. The method of manufacturing an active matrix substrate as set forth in claim 7 ,

wherein in the circuit thin film transfer step, transfer of the circuit chips onto the first substrate is performed by selectively irradiating a laser beam onto only the delamination layer of the circuit chips to be transferred.

11. The method of manufacturing an active matrix substrate as set forth in claim 10 ,

wherein in the circuit thin film transfer step, after the circuit chips are transferred onto the first substrate, the delamination layer that exists on the circuit chips is removed.

12. An active matrix substrate manufactured by the method of manufacturing an active matrix substrate as set forth in claim 1 .

13. An electro-optical device provided with electro-optical elements that are arranged corresponding to the respective cross points of a plurality of operation line films and a plurality of signal line films that are arranged in matrix, and the active matrix substrate as set forth in claim 12 .

14. An electronic device using the electro-optical device as set forth in claim 13 as a display portion.