Microspheres including nanoparticles
A microparticle can include a central region and a peripheral region. The peripheral region can include a nanoparticle, such as a metal nanoparticle, a metal oxide nanoparticle, or a semiconductor nanocrystal. The microparticle can be a member of a monodisperse population of particles.
1. A microsphere comprising:
a central region including a first matrix material; and
a first peripheral layer on a surface of the central region, the first peripheral layer including a second matrix material different from the first matrix material and including a first nanoparticle dispersed within the layer, wherein the first nanoparticle is covalently linked to the first peripheral layer.
2. The microsphere of claim 1 , wherein the central region includes an inorganic material.
3. The microsphere of claim 2 , wherein the central region includes silicon.
4. The microsphere of claim 1 , wherein the first peripheral layer includes an inorganic material.
5. The microsphere of claim 4 , wherein the first peripheral layer includes silicon or titanium.
6. The microsphere of claim 1 , wherein the microsphere has a diameter of less than 500 micrometers.
7. The microsphere of claim 1 , wherein the microsphere has a diameter of less than 10 micrometers.
8. The microsphere of claim 1 , wherein the microsphere has a diameter of less than 1 micrometer.
9. The microsphere of claim 1 , wherein the central region is substantially free of nanoparticles.
10. The microsphere of claim 1 , wherein the first nanoparticle is a metal nanoparticle, a metal oxide nanocrystal, or a semiconductor nanocrystal.
11. The microsphere of claim 1 , wherein the first nanoparticle is a semiconductor nanocrystal.
12. The microsphere of claim 11 , wherein the semiconductor nanocrystal includes a core including a first semiconductor material.
13. The microsphere of claim 12 , wherein the semiconductor nanocrystal further includes a shell overcoating the core, the shell including a second semiconductor material.
14. The microsphere of claim 13 , wherein the first semiconductor material is a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.
15. The microsphere of claim 14 , wherein the first semiconductor material is ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSh, GaSe, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
16. The microsphere of claim 15 , wherein the second semiconductor material is ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, MgO, MgS, MgSe, MgTe, HgO, HgS, HgSe, HgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, TlSb, PbS, PbSe, PbTe, or mixtures thereof.
17. The microsphere of claim 11 , wherein the microsphere includes a plurality of semiconductor nanocrystals having a rms deviation in diameter of no greater than 5%.
18. The microsphere of claim 1 , wherein the central region is substantially spherical in shape.
19. The microsphere of claim 1 , wherein the microsphere is a member of a population of microsphere having a rms deviation in diameter of no greater than 10%.