IP Library Granted Patent US 7,309,515
Granted Patent B2
US 7,309,515 · App. 10/770,526 · Granted Dec 18, 2007

Method for fabricating an imprint mold structure

Assignee: Industrial Technology Research Institute
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Quick Facts
Patent No.
US 7,309,515
App. No.
10/770,526
Granted
Dec 18, 2007
Kind
B2
Abstract

The present invention is related to a method for fabricating an imprint mold which can be used in the field of nano-imprint lithography. Firstly, a diamond film and a photoresist film are successively formed onto a substrate; wherein the photoresist film is more capable of anticorrosion than the diamond film. Then an energy beam lithography system is provided to make the photoresist film form a photoresist mask with particularly arranged patterns. Because of the etching selectivity between the diamond film and the photoresist film, on the surface of the diamond film a pattern can be easily formed with recessions and protrusions according to the photoresist mask by dry etching method.

Claims (11)

1. A method for fabricating an imprint mold includes:

a) providing a substrate;

b) forming a diamond film onto the substrate;

c) forming a photoresist film onto the diamond film;

d) using an energy beam lithography system to make the photoresist film form a particularly arranged pattern with recessions and protrusions, wherein the bottom of the recessions formed by the energy beam lithography system expose the diamond film;

e) using a method of reactive ion etching to remove the exposed diamond film; and

f) removing the photoresist film thus transferring the particularly arranged pattern onto a surface of the diamond film so as to complete the imprint mold, wherein the material of the substrate is selected from the group consisting of silicon wafer, quartz, sapphire, tungsten, molybdenum, titanium, iridium, and magnesia, wherein the material of the photoresist film is photoresist mixed with 15˜50% silicon dioxide.

2. The method for fabricating an imprint mold recited in claim 1 , wherein the material of the diamond film is selected from the group consisting of diamond and diamond like carbon (DLC).

3. The method for fabricating an imprint mold recited in claim 1 , wherein the forming method of the diamond film in step (b) is chemical vapor deposition (CVD).

4. The method for fabricating an imprint mold recited in claim 1 , wherein the energy beam used by the energy beam lithography system is selected from the group consisting of electron beam, laser beam, and focus ion beam (FIB).

5. The method for fabricating an imprint mold recited in claim 1 , wherein the imprint mold can be used in the field of Nano-Imprint Lithography.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2004
From: TSAI, HUNG-YIN; WU, CHIH-HUNG; CHENG, CHIH-YUNG
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 014960/0076 →
Continuity (1)
Related Publication 20050170292A1 · Aug 4, 2005