Thin film transistor and method of fabricating the same
A bottom gate thin film transistor and method of fabricating the same are disclosed, in which a channel region is crystallized by a super grain silicon (SGS) crystallization method, including: forming a gate electrode and a gate insulating layer on an insulating substrate; forming an amorphous silicon layer on the gate insulating layer followed by forming a capping layer and a metal catalyst layer; performing heat treatment to crystallize the amorphous silicon layer into a polysilicon layer; and forming an etch stopper, source and drain regions and source and drain electrodes. The thin film transistor includes: an insulating substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate insulating layer and crystallized by an SGS crystallization method; and source and drain regions and source and drain electrodes formed in a predetermined region of the substrate.
1. A thin film transistor comprising:
an insulating substrate;
a gate electrode formed on the substrate;
a gate insulating layer formed on the gate electrode;
a polysilicon layer formed on the gate insulating layer and crystallized by a super grain silicon (SGS) crystallization method and including source, drain, and channel regions; and
source and drain electrodes formed on a predetermined region of the polysilicon layer; and
seeds only formed in a predetermined region of the polysilicon layer; and
an etch stopper formed on the channel region of the polysilicon layer.
2. The thin film transistor according to claim 1 , wherein the etch stopper is a portion of a capping layer.
3. The thin film transistor according to claim 1 , wherein the etch stopper is formed to have a width at least larger than that of the channel region of the polysilicon layer.
4. The thin film transistor according to claim 1 , further comprising a highly doped silicon layer formed on a predetermined region of the polysilicon layer.
5. The thin film transistor according to claim 1 , wherein the source and drain regions are regions in which impurities are implanted into the polysilicon layer by an ion implantation process.
6. The thin film transistor according to claim 1 , wherein the polysilicon layer includes a metal catalyst remaining at a sheet density of 10 9 to 10 13 atoms/cm 2 .