Driver system for MOSFET based, high voltage electronic relays for AC power switching and inductive loads
View Patent ↗A method and apparatus provides for high-speed switching of high-voltage and high power MOSFET-based solid state relays. A driver for a MOSFET based, high voltage, high current electronic relay includes a current supply for actuating the switching circuit and a transformer arrangement coupled to the current supply for receiving the supply of current from the current supply. The transformer arrangement is adapted for coupling with the switching circuit for selectively applying a predetermined voltage to the switching circuit which establishes the switching circuit in switch conducting or switch isolation.
1. A driver for a MOSFET based, high voltage, high current electronic relay, wherein the relay includes a MOSFET switching circuit selectively switching between switch conducting and switch isolation, the MOSFET switching circuit including at least one small-signal MOSFET, a depletion-mode MOSFET and at least one power MOSFET, wherein the depletion-mode MOSFET is connected to the at least one power MOSFET to selectively maintain the at least one power MOSFET in non-conducting, the driver comprising:
a driver system coupled to the switching circuit for controlling switching between switch conducting and switch isolation, the driver system including:
a current supply providing a supply of current for actuating the switching circuit; and
a transformer arrangement coupled to the current supply for receiving the supply of current from the current supply, the transformer arrangement being adapted for coupling with the switching circuit for selectively applying a predetermined voltage to the switching circuit which establishes the switching circuit in switch conducting or switch isolation; and
at least one optoisolator referenced to the at least one small-signal MOSFET for controlling operation of the at least one power MOSFET in controlling the establishment of the switching circuit in switch conducting or switch isolation, wherein the at least one optoisolator drives a gate of the at least one small-signal MOSFET with reference to a source node of the at least one small-signal MOSFET to activate the at least one small-signal MOSFET which in turn controls operation of the at least one power MOSFET.
2. The driver system according to claim 1 , further including at least a first rectifier circuit linking the transformer arrangement to the switching circuit.
3. The driver system according to claim 1 , wherein the at least one optoisolator drives the gates of the small-signal MOSFET.
4. The driver system according to claim 1 , wherein the transformer arrangement includes a first isolation transformer.
5. The driver system according to claim 4 , wherein the first isolation transformer includes a primary winding powered by the current supply and a first secondary winding and a second secondary winding adapted for coupling to the switching circuit.
6. The driver system according to claim 5 , further including a first full bridge rectifier coupled to the first secondary winding and a second full bridge rectifier coupled to the second secondary winding.
7. The driver system according to claim 1 , wherein the current supply is always supplying power to the transformer arrangement during operation of the switching circuit.
8. The driver system according to claim 1 , wherein the at least one optoisolator includes a first optoisolator and a second optoisolator, and the first optoisolator is referenced to a first small-signal MOSFET of the switching circuit and the second optoisolator is referenced to a second small-signal MOSFET of the switching circuit.
9. The driver system according to claim 8 , wherein the first and second small-signal MOSFETs are respectively connected between gate and source nodes of first and second power MOSFETs of the switching circuit.
10. The driver system according to claim 9 , wherein the current supply is always supplying power to the transformer arrangement during operation of the switching circuit.
11. A switching system, comprising:
a MOSFET based, high voltage, high current electronic relay, wherein the relay includes a MOSFET switching circuit selectively switching between switch conducting and switch isolation, the MOSFET switching circuit including at least one small-signal MOSFET a depletion-mode MOSFET and at least one power MOSFET wherein the depletion-mode MOSFET is connected to the at least one power MOSFET to selectively maintain the at least one power MOSFET in non-conducting;
a driver system coupled to the switching circuit for controlling switching between switch conducting and switch isolation, the driver system including:
a current supply providing a supply of current for actuating the switching circuit; and
a transformer arrangement coupled to the current supply for receiving the supply of current from the current supply and the switching circuit for selectively applying a predetermined voltage to the switching circuit which establishes the switching circuit in switch conducting or switch isolation;
at least one optoisolator referenced to the at least one small-signal MOSFET for controlling operation of the at least one power MOSFET in controlling the establishment of the switching circuit in switch conducting or switch isolation, wherein the at least one optoisolator drives a gate of the at least one small-signal MOSFET with reference to a source node of the at least one small-signal MOSFET to activate the at least one small-signal MOSFET which in turn controls operation of the at least one power MOSFET.
12. The switching system according to claim 11 , further including at least a first rectifier circuit linking the transformer arrangement to the switching circuit.
13. The driver system according to claim 11 , wherein the at least one optoisolator drives the gates of the small-signal MOSFET.
14. The switching system according to claim 11 , wherein the transformer arrangement includes a first isolation transformer.
15. The switching system according to claim 11 , wherein the current supply is always supplying power to the transformer arrangement during operation of the switching circuit.
16. The switching system according to claim 11 , wherein the at least one optoisolator includes a first optoisolator and a second optoisolator, and the first optoisolator is referenced to a first small-signal MOSFET of the switching circuit and the second optoisolator is referenced to a second small-signal MOSFET of the switching circuit.
17. The switching system according to claim 16 , wherein the first and second small-signal MOSFETs are respectively connected between gate and source nodes of first and second power MOSFETs.
18. The switching system according to claim 17 , wherein the current supply is always supplying power to the transformer arrangement during operation of the switching circuit.
19. The driver according to claim 1 , further including at least one capacitor which powers the at least one optoisolator., the at least one capacitor forcing the depletion-mode MOSFET off upon charging thereof.
20. The switching system according to claim 11 , further including at least one capacitor which powers the at least one optoisolator, the at least one capacitor forcing the depletion-mode MOSFET off upon charging thereof.
21. A driver for a MOSFET based, high voltage, high current electronic relay, wherein the relay includes a MOSFET switching circuit selectively switching between switch conducting and switch isolation, the MOSFET switching circuit including at least one small-signal MOSFET and at least one power MOSFET, the driver comprising:
a driver system coupled to the switching circuit for controlling switching between switch conducting and switch isolation, the driver system including:
a current supply providing a supply of current for actuating the switching circuit; and
a transformer arrangement coupled to the current supply for receiving the supply of current from the current supply, the transformer arrangement being adapted for coupling with the switching circuit for selectively applying a predetermined voltage to the switching circuit which establishes the switching circuit in switch conducting or switch isolation; and
at least one optoisolator referenced to the at least one small-signal MOSFET for controlling operation of the at least one power MOSFET in controlling the establishment of the switching circuit in switch conducting or switch isolation, wherein the at least one optoisolator includes a first optoisolator and a second optoisolator, and the first optoisolator is referenced to a first small-signal MOSFET of the switching circuit and the second optoisolator is referenced to a second small-signal MOSFET of the switching circuit, and wherein the first and second small-signal MOSFETs are respectively connected between gate and source nodes of first and second power MOSFETs of the switching circuit.
22. A switching system, comprising:
a MOSFET based, high voltage, high current electronic relay, wherein the relay includes a MOSFET switching circuit selectively switching between switch conducting and switch isolation, the MOSFET switching circuit including at least one small-signal MOSFET and at least one power MOSFET;
a driver system coupled to the switching circuit for controlling switching between switch conducting and switch isolation, the driver system including:
a current supply providing a supply of current for actuating the switching circuit; and
a transformer arrangement coupled to the current supply for receiving the supply of current from the current supply and the switching circuit for selectively applying a predetermined voltage to the switching circuit which establishes the switching circuit in switch conducting or switch isolation;
at least one optoisolator referenced to the at least one small-signal MOSFET for controlling operation of the at least one power MOSFET in controlling the establishment of the switching circuit in switch conducting or switch isolation, wherein the at least one optoisolator includes a first optoisolator and a second optoisolator, and the first optoisolator is referenced to a first small-signal MOSFET of the switching circuit and the second optoisolator is referenced to a second small-signal MOSFET of the switching circuit, wherein the first and second small-signal MOSFETs are respectively connected between gate and source nodes of first and second power MOSFETs.