IP Library Granted Patent US 7,514,296
Granted Patent B2
US 7,514,296 · App. 11/682,498 · Granted Apr 7, 2009

Method for manufacturing semiconductor device

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,514,296
App. No.
11/682,498
Granted
Apr 7, 2009
Kind
B2
Abstract

A method for manufacturing a semiconductor device includes preparing a wiring board including a base board having a first surface and a second surface, a wiring pattern having a plurality of electrical connectors and formed on the first surface, a first resist layer having a first opening for exposing the electrical connectors and partially covering the first surface and the wiring pattern, and a second resist layer having a second opening that overlaps with a region where the electrical connectors are formed and partially covering the second surface; preparing a semiconductor chip having a plurality of electrodes; and performing a bonding operation for electrically coupling the plurality of electrical connectors and the plurality of electrodes correspondingly by holding and heating the semiconductor chip with a bonding tool that has a heating mechanism and an end face whose contour is smaller than that of the second opening, aligning the bonding tool in such a way that the end face only overlaps with a region inside the second opening on the second surface, and mounting the semiconductor chip on the first surface of the wiring board.

Claims (13)

1. A method for manufacturing a semiconductor device, comprising:

preparing a wiring board including a base board having a first surface and a second surface, a wiring pattern having electrical connectors and formed on the first surface, a first resist layer having a first opening for exposing the electrical connectors and covering at least a part of the first surface and a part of the wiring pattern, and a second resist layer having a second opening that overlaps with a region where the electrical connectors are formed and covering at least a part of the second surface;

preparing a semiconductor chip having electrodes; and

performing a bonding operation for electrically coupling the electrical connectors and the electrodes correspondingly by holding and heating the semiconductor chip with a bonding tool that has a heating mechanism and an end face whose contour is smaller than that of the second opening, aligning the bonding tool in such a way that the end face only overlaps with a region inside the second opening on the second surface, and mounting the semiconductor chip on the wiring board with the semiconductor chip facing the first surface.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the contour of the end face of the bonding tool is smaller than that of the first opening, and the semiconductor chip is mounted on the wiring board in the bonding operation by aligning the bonding tool in such a way that the end face only overlaps with a region inside the first opening on the first surface.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the contour of the end face of the bonding tool is larger than that of the semiconductor chip.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein the contour of the end face of the bonding tool is smaller than that of the semiconductor chip, and the contour of the end face of the bonding tool is larger than that of a region where the electrical connectors are formed.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein the bonding operation is performed by placing the wiring board on a bonding stage having a sucker and mounting the semiconductor chip on the wiring board while sucking a region exposed through the second opening on the second surface by the sucker.

6. A method for manufacturing a semiconductor device, comprising:

preparing a wiring board including a base board having a first surface and a second surface, a wiring pattern having electrical connectors and formed on the first surface, a first resist layer having a first opening for exposing the electrical connectors and partially covering the first surface and the wiring pattern, and a second resist layer having a second opening that overlaps with a region where the electrical connectors are formed and partially covering the second surface;

preparing a semiconductor chip having electrodes; and

performing a bonding operation for electrically coupling the electrical connectors and the electrodes correspondingly by placing the wiring board on a bonding stage having a sucker and mounting the semiconductor chip on the wiring board while sucking a region exposed through the second opening on the second surface by the sucker.

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the wiring board has a second wiring pattern on the second surface, and the second resist layer covers the second wiring pattern.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2020
From: SEIKO EPSON CORPORATION
To: 138 EAST LCD ADVANCEMENTS LIMITED
Reel/Frame 053671/0900 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2007
From: TAJIMI, SHIGEHISA
To: SEIKO EPSON CORPORATION
Reel/Frame 018966/0739 →
Priority Claims (1)
JP 2006-060770 · Mar 7, 2006 · national
Continuity (1)
Related Publication 20070212814A1 · Sep 13, 2007