Method for manufacturing semiconductor device

1. A method for manufacturing a semiconductor device, the method comprising:

etching a semiconductor substrate to form a recess gate region and an overlay vernier region;

forming a gate oxide film over the recess gate region and the overlay vernier region of the semiconductor substrate;

forming a polysilicon layer which fills the recess gate region and the overlay vernier region;

removing the polysilicon layer formed over the overlay vernier region but not the polysilicon layer formed over the recess gate region;

depositing a gate conductive layer over the overlay vernier region and the polysilicon layer remaining over the recess gate region; and

aligning a gate mask using the overlay vernier region to etch the gate conductive layer to form a gate.

2. The method according to claim 1 , wherein the removing step includes a dry etching process with a key open mask which exposes the polysilicon layer over the overlay vernier region.

3. The method according to claim 1 , wherein the removing step comprises:

forming a key open mask which exposes the polysilicon layer provided over the overlay vernier region; and

performing an etch process to remove the polysilicon layer over the overlay vernier region, wherein a step difference is created between the overlay vernier region and the recess gate region.

4. The method of claim 3 , wherein the etch process is performed until the gate oxide film provided over the overlay vernier is substantially exposed.

5. The method of claim 3 , wherein the etch process includes: a first etch process performed under a pressure ranging from 0 to 10 mT and using a source power ranging from 300 to 1500 W, a bias power ranging from 100 to 1000 W, and a first etch gas including CF 4 , and

a second etch process performed under a pressure ranging from 5 to 50 mT and using a source power ranging from 300 to 2500 W, a bias power ranging from 10 to 500 W, and a second etch gate including HBr.

6. The method of claim 5 , wherein the first etch gas includes CF 4 and Cl 2 gas.

7. The method of claim 6 , wherein the second etch gas includes O 2 gas.

8. The method according to claim 3 , wherein the etch process uses one selected from the group consist of CCP (Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma), MERlE (Magnetically Enhanced Reactive Ion Etcher) plasma and Microwave Source plasma.

9. The method according to claim 5 , wherein, during the second etch process, the source power is at least 5 times larger than the bias power.

10. The method according to claim 7 , wherein an amount of HBr gas used in the second etch process is 20˜70 times more than O 2 gas.

11. The method according to claim 3 , wherein the etch selectivity of the polysilicon layer: the gate oxide film is 50:1 to 150:1.

12. A method for manufacturing a semiconductor device having an active region and an overlay vernier region, the method comprising:

etching a semiconductor substrate to form a trench in the overlay vernier region;

forming a gate oxide film over the active region and the overlay vernier region;

forming a polysilicon layer over the overlay vernier region and the active region, the polysilicon layer filling the trench;

removing the polysilicon layer formed over the overlay vernier region but not the polysilicon layer formed over the active region in order to make a step difference between the overlay vernier region and the active region;

depositing a gate conductive layer over the polysilicon layer remaining over the active region; and

aligning a gate mask using the overlay vernier region to etch the gate conductive layer to form a gate.

13. The method of claim 12 , wherein the trench formed in the overlay vernier region is used to align the gate mask.