Semiconductor constructions and semiconductor device fabrication methods

1. A method of fabricating a semiconductor device, comprising:

etching a substrate formed on a backside of a semiconductor wafer to form a recess in said substrate; and

forming a sputter film in said recess, said sputter film including:

a first layer comprising a first material having a coefficient of thermal expansion (CTE) which is at least substantially equal to a CTE of said substrate;

a second layer formed on said first layer and comprising a second material having a thermal conductivity which is greater than a thermal conductivity of said substrate; and

a transition layer which is formed between said first and second layers and comprises said first and second materials.

2. The method of claim 1 , wherein said transition layer gradually transition from a first end in which a content of said first material is greater than a content of said second material, to a second end in which a content of said first material is greater than a content of said second material, to a second end in which a content of said first material is less than a content of said second material.

3. The method of claim 2 , wherein said substrate comprises a silicon substrate, said first layer comprises a silicon layer, and said second layer comprises an aluminum layer.

4. The method of claim 3 , wherein said first layer is formed in said recess directly on said silicon substrate.

5. The method of claim 1 , further comprising:

mounting a heat sink on said sputter film.

6. The method of claim 5 , wherein said heat sink has a CTE which is at least substantially equal to a CTE of said second material.

7. The method of claim 1 , wherein said first material comprises a semiconductor and said second material comprises a metal.

8. The method of claim 1 , wherein said first material comprises silicon and said second material comprises aluminum.

9. The method of claim 1 , wherein said wafer includes a silicon-on-insulator wafer including a buried insulating layer.

10. The method of claim 1 , further comprising:

forming a barrier layer on a backside of said buried insulating layer,

wherein a thickness of a frontside of said wafer between an uppermost surface of said wafer and said barrier layer is in a range from about 10 to about 20% of a total thickness of said wafer.

11. The method of claim 1 , wherein said coefficient of thermal expansion (CTE) of said first material is equal to said CTE of said substrate.

12. The method of claim 1 , wherein said wafer comprises a silicon-on-insulator wafer and said first material comprises silicon.

13. The method of claim 1 , wherein a thickness of said sputter film is substantially equal to a thickness of said recess in said substrate.

14. A method of fabricating a semiconductor device, comprising:

etching a silicon substrate formed on a backside of a silicon-on-insulator (SOI) wafer to form a recess in said substrate;

forming a sputter film in said recess, said sputter film including:

a first layer formed directly on said silicon substrate and comprising silicon;

a second layer formed on said first layer and comprising a metal; and

a transition layer which is formed between said first and second layers and comprises silicon and said metal, said transition layer gradually transitioning from a first end in which a content of silicon is greater than a content of said metal, to a second end in which a content of silicon is less than a content of said metal; and

mounting a heat sink on said sputter film, said heat sink having a CTE which is at least substantially equal to a CTE of said metal.

15. The method of claim 14 , further comprising:

forming a barrier layer on a backside of a buried insulating layer of a silicon-on-insulator (SOI) wafer, a thickness of a frontside of said wafer between an uppermost surface of said wafer and said baffler layer being in a range from about 10 to about 20% of a total thickness of said wafer.