Semiconductor device and method for manufacturing the semiconductor device
A semiconductor device, comprises: a wiring formed on a first insulating film, a second insulating film formed on the first insulating film and on the wiring, a contact hole formed in the second insulating film and located on the wiring, a coating that covers a sidewall of the contact hole and is formed by sputtering the wiring at the bottom of the contact hole, a barrier film formed on the coating and at the bottom of the contact hole, and an electrical conductor deposited in the contact hole.
1. A semiconductor device, comprising:
a wiring formed on a first insulating film;
a second insulating film formed on the first insulating film and on the wiring, the second insulating film having a contact hole on the wiring;
a film formed on a side surface of the contact hole;
a first barrier film formed on the film and the wiring; and
a plug formed in the contact hole,
wherein the first barrier film directly contacts the wiring at a bottom of the contact hole; and
wherein the film is progressively thinner from the bottom to a top of the contact hole.
2. The device according to claim 1 , wherein the wiring includes a TiN film, and the first barrier film directly contacts the TiN film at the bottom of the contact hole.
3. The device according to claim 1 , wherein the wiring includes a Ti film, and the first barrier film directly contacts the Ti film at the bottom of the contact hole.
4. The device according to claim 1 , wherein the wiring includes an alloy film including Al, and the first barrier film directly contacts the alloy film at the bottom of the contact hole.
5. The device according to claim 1 , wherein the film is not island shaped.
6. The device according to claim 1 , wherein the film is formed on an entire surface of the contact hole.
7. The device according to claim 1 , wherein the film is not formed on a part of an upper side surface of the contact hole.
8. The device according to claim 1 , wherein the wiring includes:
a second barrier film formed on the first insulating film;
an alloy film including Al is formed on the second barrier layer; and
an antireflection film is formed on the alloy film.
9. The device according to claim 1 , wherein the film includes Ti and O.
10. The device according to claim 1 , wherein the film includes Al and O.
11. The device according to claim 1 , wherein the film includes Ti, N and O.
12. The device according to claim 1 , wherein the film includes O.
13. A semiconductor device comprising:
a wiring formed on a first insulating film;
a second insulating film formed on the first insulating film and on the wiring, the second insulating film having a contact hole on the wiring;
a first film formed on a side surface of the contact hole;
a second film formed on the first film and the wiring, the second film directly contacting the wiring at a bottom of the contact hole; and
a plug formed in the contact hole,
the first film having a first portion and a second portion disposed above the first portion in the contact hole, and
a horizontal thickness of the first portion being thicker than a horizontal thickness of the second portion.