SAW-component having a reduced temperature path and method for the production thereof

1. An element comprising:

a piezoelectric substrate having a first thermal coefficient of expansion and a thickness of x times lambda, where 5<x<50 and lambda is a wavelength of the element at a center frequency;

electrically conducting element structures on an upper side of the substrate;

a compensation layer on an underside of the substrate; and

an SiO 2 layer over the element structures, wherein the element is configured to be operated using an acoustic wave and the SiO 2 layer has a thickness of about 5% to about 20% of a wavelength of the acoustic wave at the center frequency.

2. The element of claim 1 , wherein the compensation layer comprises a material having a second thermal coefficient of expansion, the second coefficient of expansion being less than the first coefficient of expansion.

3. The element of claim 1 , wherein the compensation layer comprises a solid body bonded to the substrate.

4. The element of claim 1 , further comprising an intermediate layer between the substrate and the compensation layer, the intermediate layer having a thickness that is less than a thickness of the compensation layer.

5. The element of claim 4 , wherein the intermediate layer comprises one of a high-resistance layer, an antireflective layer and an adhesive layer.

6. The element of claim 1 , wherein the element structures comprise a material or material combination having a total density that is greater than a density of pure Al.

7. The element of claim 6 , wherein the element structures comprise a multilayer structure comprising layers of Al and layers of at least one of Cu, Mo, W and Ta.

8. The element of claim 6 , further comprising:

a first layer comprising one of Cu, Mo, W and Ta on the element structures; and

an electrode body comprising a uniform material or a multilayer structure comprising multiple individual layers, wherein the uniform material or the individual layers of the multilayer structure comprise at least one of Al, Cu, Mg and Ag.

9. The element of claim 1 , wherein the compensation layer comprises a glass layer.

10. The element of claim 1 , wherein the compensation layer comprises a material having a coefficient of expansion from about 1 to about 3.5 ppmK −1 .

11. The element of claim 1 , wherein a total height of the substrate and the compensation layer is less than about 400 μm.

12. An element comprising:

a piezoelectric substrate having a first thermal coefficient of expansion and a thickness of x times lambda, where 5<x<50 and lambda is a wavelength of the element at a center frequency;

electrically conducting element structures on an upper side of the substrate;

a compensation layer on an underside of the substrate; and

an SiO 2 layer over the element structures, wherein the element is configured to be operated using an acoustic wave and the SiO 2 layer has a thickness of about 5% to about 20% of a wavelength of the acoustic wave at the center frequency,

wherein:

the element structures comprise strip-shaped electrode fingers having lateral edges at angles to a surface of the substrate; and

lateral edges are at angles between about 65° and about 85° relative to a surface of the piezoelectric substrate.

13. The element of claim 12 , wherein:

the element structures comprise strip-shaped electrode fingers having lateral edges at an incline to a surface of the substrate; and

the SiO 2 layer has a surface structure similar to the structure of the electrode fingers and having about the same spacing as the electrode fingers.

14. An element comprising:

a piezoelectric substrate having a first thermal coefficient of expansion and a thickness of x times lambda, where 5<x<50 and lambda is a wavelength of the element at a center frequency;

electrically conducting element structures on an upper side of the substrate;

a compensation layer on an underside of the substrate; and

an SiO 2 layer over the element structures, wherein the element is configured to be operated using an acoustic wave and the SiO 2 layer has a thickness of about 5% to about 20% of a wavelength of the acoustic wave at the center frequency,

wherein:

the compensation layer comprises a support material that is a part of the housing, the support material having a third thermal coefficient of expansion that is less than the first thermal coefficient of expansion; and

the support material is connected to the element structures on the surface of the substrate by bumps.

15. The element of claim 14 , wherein the support material comprises a multilayer material comprising multiple layers, the multilayer material having at least one metallization level between the layers, and wherein at least one layer comprises ceramic, glass or plastic circuit board material.

16. The element of claim 14 , wherein the compensation layer comprises a lower section of a housing for the element.

17. The element of claim 1 , wherein the SiO 2 layer has a thickness of about 5% to about 15% of the wavelength of the acoustic wave at the center frequency.

18. An element comprising:

a piezoelectric substrate having a first thermal coefficient of expansion and a thickness of x times lambda, where 5<x <50 and lambda is a wavelength of the element at a center frequency;

electrically conducting element structures on an upper side of the substrate;

a compensation layer on an underside of the substrate; and

an SiO 2 layer over the element structures, wherein the element is configured to be operated using an acoustic wave and the SiO 2 layer has a thickness of about 5% to about 20% of a wavelength of the acoustic wave at the center frequency,

wherein the compensation layer is mechanically braced with the substrate.

19. The element of claim 18 , wherein the compensation layer is configured to form a mechanical bracing with the substrate when there is a temperature change.