Hermetically sealed structure, piezoelectric device and improvement of method for manufacturing the same
View Patent ↗A hermetically sealed structure in which a base substrate 31 and a lid 33 are hermetically sealed, the base substrate serving as a part of a containing body for uniformly forming or bonding an electronic part, the lid being a lid body to be hermetically bonded to the base substrate, is structured as follows: the lid is made from a material, through which light passes; as a metal layer 25 of at least a sealing portion of the lid a platable layer 22 for performing plating and a bonding layer 24 made from gold, the bonding layer being formed closer to the front side than the platable layer are formed; and the lid is structured so as to be bonded to the base substrate 31 by an Au—Ge alloy.
1. A hermetically sealed structure comprising:
a base substrate;
a lid hermetically bonded to the base substrate by an Au—Ge alloy, the lid being made from a material through which light passes;
a first metal layer provided on a surface of the lid bonded to the base substrate, the first metal layer including:
a first foundation layer made from Cr formed on the surface of the lid;
a first platable layer made from either Au or Al alloy formed on the first foundation layer;
a first bonding layer made from Au, the first bonding layer being formed closer to the Au—Ge alloy than the first platable layer; and
a first barrier layer made from Ni formed between the first platable layer and the first bonding layer;
a second metal layer provided on a surface of the base substrate bonded to the lid, the second metal layer including:
a second foundation layer made from Cr formed on the surface of the base substrate;
a second platable layer made from either Au or Al alloy formed on the second foundation layer;
a second bonding layer made from Au, the second bonding layer being formed closer to the Au—Ge alloy than the second platable layer;
a second barrier layer made from Ni formed between the second platable layer and the second bonding layer;
wherein the Au—Ge alloy is sandwiched between the first metal layer and the second metal layer; and
the base substrate serves as a part of a containing body for a piezoelectric device.
2. A piezoelectric device comprising:
a base substrate;
a first Au—Ge alloy formed on the base substrate;
a framed resonator element fixed to the base substrate by the first Au—Ge alloy;
a second Au—Ge alloy formed on the framed resonator element;
a lid fixed to the framed resonator element by the second Au—Ge alloy, the lid being formed from a material through which light passes; and
first and second pairs of metal layers that sandwich the first and second Au—Ge alloys, respectively, each of the metal layers including:
a foundation layer made from Cr;
a platable layer including either Au or Al alloy formed on the first foundation layer;
a bonding layer made from Au, the bonding layer being formed closer to the respective Au—Ge alloy than the platable layer; and
a barrier layer made from Ni formed between the platable layer and the bonding layer.
3. The piezoelectric device according to claim 2 , wherein the platable layer being one selected from the group consisting of AlCu, AlTi, AlSiCu, and Au.
4. The piezoelectric device according to claim 2 , wherein the base substrate, the framed resonator element, and the lid are made from quartz.
5. The piezoelectric device according to claim 2 , wherein the base substrate and the lid are made from glass, and the framed resonator element is made from quartz.
6. A piezoelectric device comprising:
a base substrate;
a first Au—Ge alloy formed on the base substrate;
a piezoelectric resonator element fixed to the base substrate by the first Au—Ge alloy;
a second Au—Ge alloy formed on the resonator element;
a lid fixed to the resonator element by the second Au—Ge alloy, the lid being formed from a material through which light passes; and
first and second pairs of metal layers that sandwich the first and second Au—Ge alloys, respectively, each of the metal layers including:
a foundation layer made from Cr;
a platable layer including either Au or Al alloy formed on the first foundation layer;
a bonding layer made from Au, the bonding layer being formed closer to the respective Au—Ge alloy than the platable layer; and
a barrier layer made from Ni formed between the platable layer and the bonding layer,
wherein the base substrate has a thorough hole sealed by a filler material.
7. The piezoelectric device according to claim 6 , wherein the metal layers and the Au—Ge alloys are provided around a perimeter of the base substrate and the lid.
8. The piezoelectric device according to claim 6 , wherein the filler material includes a metal material.