IP Library Granted Patent US 7,608,859
Granted Patent B2
US 7,608,859 · App. 11/485,316 · Granted Oct 27, 2009

Semiconductor light-emitting device with transparent conductive film

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Quick Facts
Patent No.
US 7,608,859
App. No.
11/485,316
Granted
Oct 27, 2009
Kind
B2
Abstract

A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×10 19 /cm 3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.

Claims (10)

1. A semiconductor light-emitting device with a transparent conductive film, comprising:

a light-emitting portion formed on a semiconductor substrate, said light-emitting portion comprising at least an n-type clad layer, an active layer and a p-type clad layer doped with Mg;

an As-based contact layer formed on said light-emitting portion, said contact layer being doped with Zn as a p-type dopant of 1×10 19 /cm 3 or more;

a current spreading layer formed on said contact layer, said current spreading layer comprising a transparent conductive film of a metal oxide material; and

a buffer layer formed between said contact layer and said p-type clad layer;

wherein said buffer layer comprises at least two or more buffer layer parts, and adjacent buffer layer parts are different from each other in material or composition,

wherein said buffer layer parts comprise a material that is transparent with respect to a light with an emission peak wavelength, and

wherein at least one of said two or more buffer layer parts alternately formed comprises an undoped layer.

2. The semiconductor light-emitting device with a transparent conductive film according to claim 1 , wherein:

said undoped layer has a carbon density of 5×10 17 atoms/cm 3 or less.

Assignments (2)
MERGER Recorded Jan 29, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 032134/0723 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 13, 2006
From: KONNO, TAICHIROO; IIZUKA, KAZUYUKI; ARAI, MASAHIRO
To: HITACHI CABLE, LTD.
Reel/Frame 018103/0420 →