Club extension to a T-gate high electron mobility transistor
View Patent ↗A method of fabricating a T-gate HEMT with a club extension comprising the steps of: providing a substrate; providing a bi-layer resist on the substrate; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to a T-gate opening; exposing an area of the bi-layer resist to electron beam lithography where the area corresponds to the shape of the club extension wherein the area corresponding to the club extension is approximately 1 micron to an ohmic source side of a T-gate and approximately 0.5 microns forward from a front of the T-gate; developing out the bi-layer resist in the exposed area that corresponds to the T-gate opening; developing out the bi-layer resist in the exposed area that corresponds to the club extension; and forming the T-gate and club extension through a metallization process.
1. A system comprising:
a T-gate high electron mobility transistor (HEMT);
a club extension positioned on an ohmic source side of a proximate front of the T-gate HEMT and approximately 0.03 to 0.5 microns forward from a front of the T-gate HEMT; and
wherein the club extension is metallically affixed to the T-gate HEMT and the T-gate HEMT is affixed to a substrate.
2. The system of claim 1 wherein the substrate is one of GaN, Sapphire, SiN, SiC, and a III V substrate.
3. The system of claim 1 wherein the club extends to the substrate.
4. The system of claim 3 wherein the club approximates a circle with an approximate diameter of 0.4 to 2 microns.
5. The system of claim 3 wherein the club approximates a square wherein:
a length of a side of the approximate square is approximately 0.4 to 2 microns; and
at least one side of the approximate square is substantially parallel to a wing of the T-gate HEMT.
6. The system of claim 3 wherein the club approximates a parallelogram wherein:
a height of the approximate parallelogram is approximately 0.4 to 2 microns;
a width of the approximate parallelogram is approximately 0.4 to 2 microns; and
a longer side of the approximate parallelogram is parallel to a wing of the T-gate HEMT.
7. The system of claim 3 wherein the club approximates a polygon wherein a diameter of the approximate polygon is approximately 0.4 to 2 microns.
8. The system of claim 1 wherein the club does not extend to the substrate.
9. The system of claim 8 wherein the club approximates a circle wherein the approximately circular club has an approximate diameter of 0.4 to 2 microns.
10. The system of claim 8 wherein the club approximates a square wherein:
a length of a side of the approximately square is approximately 0.4 to 2 microns; and
at least one side of the approximately square club is parallel to a wing of the T-gate HEMT.
11. The system of claim 8 wherein the club approximates a parallelogram wherein:
a height of the approximate parallelogram is approximately 0.4 to 2 microns;
a width of the approximate parallelogram is approximately 0.4 to 2 microns; and
the longer side of the approximate parallelogram is parallel to a wing of the T-gate HEMT.
12. The system of claim 8 wherein the club approximates a polygon wherein:
a diameter of the approximate polygon is approximately 0.4 to 2 microns.