Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment
A second substrate 21 composed of a material having a lower dielectric constant than that of a piezoelectric substrate 2 having a transmission-side filter region 12 and a receiving-side filter region 13 formed therein is joined to the other main surface of the piezoelectric substrate 2 , and a conductor layer 22 is formed throughout the other main surface of the second substrate 21 . The effective dielectric constant of the substrate is reduced, thereby making it possible to reduce a parasitic capacitance formed between an input electrode section 5 in the transmission-side filter region 12 and an output electrode section 6 in the receiving-side filter region 13 and to improve isolation characteristics.
1. A surface acoustic wave device in which an IDT electrode, an input electrode section, and an output electrode section are formed in a filter region on one main surface of a first substrate composed of a piezoelectric member, wherein
a second substrate composed of a material having a lower dielectric constant than that of the first substrate is joined to the other main surface of the first substrate, and
a conductor layer is formed on a surface of the second substrate opposite to the surface joined to the first substrate, and
wherein the conductor layer is formed throughout the surface of the second substrate opposite to the surface joined to the first substrate,
wherein the second substrate is a multilayer substrate.
2. The surface acoustic wave device according to claim 1 ,
wherein the filter region comprises a transmission-side filter region and a receiving-side filter region, and
the IDT electrode, the input electrode section, and the output electrode section are formed in each of the filter regions.
3. The surface acoustic wave device according to claim 1 , wherein the second substrate is joined to the first substrate through an adhesive layer.
4. The surface acoustic wave device according to claim 1 , if wherein the other main surface of the first substrate is a surface rougher than the one main surface of the first substrate.
5. The surface acoustic wave device according to claim 1 , wherein the second substrate is composed of a material having a lower coefficient of thermal expansion than that of the first substrate composed of a piezoelectric member.
6. The surface acoustic wave device according to claim 1 , wherein the second substrate is composed of a material selected from silicon, glass, sapphire, quartz, crystal, resin, and ceramics.
7. The surface acoustic wave device according to claim 1 , wherein the relationship between the thickness d 2 of the second substrate and the thickness d 1 of the first substrate is d 2 >d 1 .
8. A surface acoustic wave apparatus, comprising:
a surface acoustic wave device having an IDT electrode, an input electrode section, and an output electrode section that are formed in a filter region on one main surface of a first substrate composed of a piezoelectric member, a second substrate composed of a material having a lower dielectric constant than that of the first substrate joined to the other main surface of the first substrate, and a conductor layer formed throughout a surface of the second substrate opposite to the surface joined to the first substrate, wherein the second substrate is a multilayer substrate, and
a mounting substrate,
wherein the surface acoustic wave device is mounted on the mounting substrate with the main surface, on which the filter region is formed, of the first substrate in the surface acoustic wave device opposed thereto.
9. The surface acoustic wave device according to claim 8 , wherein the other main surface of the first substrate is a surface rougher than the one main surface of the first substrate.
10. Communications equipment comprising at least one of a receiving circuit and a transmission circuit having the surface acoustic wave apparatus according to claim 8 .
11. Communications equipment, wherein the surface acoustic wave apparatus according to claim 8 is used as a branching filter.