IP Library Granted Patent US 7,615,255
Granted Patent B2
US 7,615,255 · App. 11/511,155 · Granted Nov 10, 2009

Metal duplex method

Assignee: Rohm and Haas Electronic Materials LLC
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Quick Facts
Patent No.
US 7,615,255
App. No.
11/511,155
Granted
Nov 10, 2009
Kind
B2
Abstract

Methods and articles are disclosed. The methods are directed to depositing nickel duplex layers on substrates to inhibit tin and tin alloy surface oxidation and improve solderability of the substrates.

Claims (4)

1. A method comprising electrolytically depositing a nickel layer on a substrate, electrolytically depositing a nickel phosphorous layer on the nickel layer to form a nickel and nickel phosphorous duplex layer, and depositing a tin or tin alloy layer on the nickel phosphorous layer of the duplex layer, the duplex layer is 2 microns to 3 microns thick, and reflowing the tin or tin alloy layer in a plurality of temperature zones within a temperature range of 100° C. to 350° C. followed by cooling the reflowed tin or tin alloy layer to room temperature.

2. The method of claim 1 , wherein a phosphorous content of the nickel phosphorous layer is 0.1 wt % to 15 wt %.

3. The method of claim 2 , wherein the phosphorous content of the nickel phosphorous layer is 3 wt % to 8 wt %.

4. The method of claim 1 , wherein the tin or tin alloy layer remains in a temperature zone for 20 seconds to 50 seconds.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2006
From: LAU, DANNY; KWOK, RAYMUND W.M.
To: ROHM AND HAAS ELECTRONIC MATERIALS LLC
Reel/Frame 018255/0216 →
Continuity (2)
Provisional Application 6071457500 · Sep 7, 2005
Related Publication 20070054138A1 · Mar 8, 2007