IP Library Granted Patent US 7,615,334
Granted Patent B2
US 7,615,334 · App. 11/227,089 · Granted Nov 10, 2009

Ink composition for etching resist, method of forming etching resist pattern using the same, and method of forming microchannel using the ink composition

Assignee: LG Chem, Ltd.
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Quick Facts
Patent No.
US 7,615,334
App. No.
11/227,089
Granted
Nov 10, 2009
Kind
B2
Abstract

Provided are an ink composition for an etching resist, a method of forming an etching resist pattern using the ink composition, and a method of forming a microchannel using the ink composition. The ink composition is suitable for forming a micro pattern due to its poor spreading on the substrate and is suitable for etching-resist for copper of a printed circuit board and deep etching a stainless steel substrate due to its excellent chemical properties that allow it to resist an etching solution.

Claims (22)

1. A composition consisting of:

2-50 parts by weight of an aqueous polymer or polymer emulsion based on the dry weight of the aqueous polymer or the polymer emulsion; and

10-95 parts by weight of water, 50 or less parts by weight of an anti-drying agent, 5 or less parts by weight of a hydrophobic material, and 5 or less parts by weight of at least one additive selected from the group consisting of a surfactant. an antifoaming agent, an ultraviolet ray-absorbing agent, a photo stabilizer, a microbe suppressor, a chelating agent, an oxygen absorber, and a heat-curing suppressor, based on 100 parts by weight of the composition;

wherein the composition is capable of drying or curing without being exposed to a radioactive ray.

2. The composition of claim 1 , wherein the aqueous polymer is a multi-functional (meta)acryl polymer or urethane (meta)acryl polymer which contains 3-30 ethoxy or propoxy groups.

3. The composition of claim 2 , wherein the multi-functional (meta)acryl polymer or urethane (meta)acryl polymer which contains ethoxy groups or propoxy groups is ethoxylated bishenol A di(meta)acrylate, ethoxylated glycerine tri(meta)acrylate, ethoxylated polyethylene glycol di(meta)acrylate, propoxylated neopentyl glycol di(meta)acrylate, propoxylated trimethylopropane tri(meta)acrylate, ethoxylated or propoxylated pentaeritritol tetraacrylate, ethoxylated trimethylopropane tricrylate, ethoxylated 2-methol-1,3-propanediol diacrylate, propoxylated or ethoxylated bisphenol-A-diacrylate, ethoxylated cyclohexanedimethanol di(meta)acrylate, ethoxylated bisphenol-A-dimetacrylate, ethoxylated, polypropyleneglycol di(meta)acrylate, or propoxylated polyethyleneglycol di(meta)acrylate.

4. The composition of claim 1 , wherein the polymer emulsion is one of an acryl polymer and a urethane acryl polymer emulsion.

5. A method of forming an etching resist pattern, the method comprising:

spraying an ink composition for an etching resist onto a substrate to form a desired pattern; and

thermal curing or drying the sprayed ink composition,

wherein the ink composition for the etching resist consists of

2-50 parts by weight of an aqueous polymer or polymer emulsion based on the dry weight of the aqueous polymer or the polymer emulsion and

10-95 parts by weight of water, 50 or less parts by weight of an anti-drying agent, 5 or less parts by weight of a hydrophobic material, and 5 or less parts by weight of at least one additive selected from the group consisting of a surfactant, an antifoaming agent an ultraviolet ray-absorbing agent, a photo stabilizer, a microbe suppressor, a chelating agent, an oxygen absorber, and a heat-curing suppressor, based on 100 parts by weight of the ink composition.

6. The method of claim 5 , wherein the ink composition for the etching resist is sprayed using an ink jet.

7. A method of forming a microchannel, the method comprising:

spraying an ink composition for the etching resist onto a substrate to form a desired pattern;

thermal curing or drying the sprayed ink composition to form an etching resist pattern;

selectively etching the substrate on which the etching resist pattern is formed; and

removing the remaining etching resist pattern,

wherein the ink composition for the etching resist consists of

2-50 parts by weight of an aqueous polymer or polymer emulsion based on the dry weight of the aqueous polymer or the polymer emulsion and

10-95 parts by weight of water, 50 or less parts by weight of an anti-drying agent, 5 or less parts by weight of a hydrophobic material, and 5 or less parts by weight of at least one additive selected from the group consisting of a surfactant, an antifoaming agent, an ultraviolet ray-absorbing agent, a photo stabilizer, a microbe suppressor, a chelating agent, an oxygen absorber, and a heat-curing suppressor, based on 100 parts by weight of the ink composition.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 7, 2006
From: KIM, JOON HYUNG; KIM, HYUNSIK; KWON, YOUNGWOON; SEO, JUNG HYUN
To: LG CHEM, LTD.
Reel/Frame 017769/0333 →
Priority Claims (1)
KR 10-2004-0074556 · Sep 17, 2004 · national
Continuity (1)
Related Publication 20060060563A1 · Mar 23, 2006