Field effect transistor and method of forming a field effect transistor
A method of forming a field effect transistor comprises providing a semiconductor substrate, a gate electrode being formed over the semiconductor substrate. At least one cavity is formed adjacent the gate electrode. A strain-creating element is formed in the at least one cavity. The strain-creating element comprises a compound material comprising a first chemical element and a second chemical element. A first concentration ratio between a concentration of the first chemical element in a first portion of the strain-creating element and a concentration of the second chemical element in the first portion of the strain-creating element is different from a second concentration ratio between a concentration of the first chemical element in a second portion of the strain-creating element and a concentration of the second chemical element in the second strain-creating element.
1. A method of forming a field effect transistor, comprising:
providing a semiconductor substrate, a gate electrode being formed above said semiconductor substrate;
forming at least one cavity in said substrate adjacent said gate electrode; and
forming a strain-creating element in said at least one cavity, said strain-creating element comprising:
a compound material comprising a first chemical element and a second chemical element, wherein said first chemical element comprises one of germanium and carbon, said second chemical element comprises silicon, and said semiconductor substrate comprises said second chemical element;
a first portion and a second portion, wherein said second portion is located above said first portion;
a first concentration ratio between a concentration of said first chemical element in said first portion and a concentration of said second chemical element in said first portion; and
a second concentration ratio between a concentration of said first chemical element in said second portion and a concentration of said second chemical element in said second portion, wherein said first concentration ratio is smaller than said second concentration ratio and wherein a ratio between a concentration of said first chemical element and a concentration of said second chemical element increases in a vertical direction with increasing distance from a bottom surface of said at least one cavity formed in said substrate.
2. The method of claim 1 , wherein said first portion of said strain-creating element and said second portion of said strain-creating element comprise sub-layers of said strain-creating element.
3. The method of claim 2 , wherein said second concentration ratio is greater than about 1%.
4. The method of claim 3 , wherein said second concentration ratio is greater than about 10%.
5. The method of claim 1 , wherein said formation of said strain-creating element comprises performing a selective epitaxial growth process.
6. The method of claim 5 , further comprising changing a ratio between a flow rate of a first reactant comprising said first chemical element and a flow rate of a second reactant comprising said second chemical element during said selective epitaxial growth process, wherein said ratio between said flow rates is increased substantially continuously during said selective epitaxial growth process.
7. A method of forming a field effect transistor, comprising:
providing a semiconductor substrate, a gate electrode being formed above said substrate;
forming at least one cavity in said substrate adjacent said gate electrode; and
performing a selective epitaxial growth process adapted to form a strain-creating element in said cavity, said strain-creating element comprising a compound material comprising a first chemical element and a second chemical element, said first chemical element comprising one of germanium and carbon, said second chemical element comprising silicon, and said semiconductor substrate comprising said second chemical element, wherein said selective epitaxial growth process comprises:
supplying a first reactant comprising said first chemical element and a second reactant comprising said second chemical element; and
increasing a ratio between a flow rate of said first reactant and a flow rate of said second reactant at least once during said selective epitaxial growth process, wherein said ratio between said flow rates is increased substantially continuously during said selective epitaxial growth process.