Transistor performance enhancement using engineered strains
A semiconductor substrate having metal oxide semiconductor (MOS) devices, such as an integrated circuit die, is mechanically coupled to a stress structure to apply a stress that improves the performance of at least a portion of the MOS devices on the die.
1. An apparatus comprising
a die having a semiconductor substrate and metal oxide semiconductor (MOS) devices;
a metal matrix stress structure with uniaxial carbon fibers mechanically coupled to the substrate and aligned with respect to the substrate so that under thermal expansion, the carbon fibers apply a uniaxial stress that improves the performance of at least a portion of the MOS devices.
2. The apparatus of claim 1 , wherein the stress structure comprises a metal heat spreader thermally coupled to the substrate.
3. The apparatus of claim 1 , wherein the stress structure comprises a metal plate soldered to the substrate.
4. The apparatus of claim 1 , wherein the stress structure comprises an integrated heat spreader.
5. The apparatus of claim 1 , wherein the stress structure comprise a film that is applied to a surface of the substrate.
6. The apparatus of claim 5 , wherein the film is applied by chemical vapor deposition.
7. The apparatus of claim 5 , wherein the film comprises a chemical vapor deposition diamond film.
8. An apparatus comprising:
a semiconductor die comprising metal oxide semiconductor (MOS) devices;
a heat spreader having a first coefficient of thermal expansion in one direction and a second different coefficient of thermal expansion in a second perpendicular direction, so that when coupled to the die the heat spreader applies a different stress to the die in the first direction than in the second direction; and
a heat sink coupled to the heat spreader.
9. The apparatus of claim 8 , wherein the heat spreader applies a compressive stress to the die in the first direction at the operational temperature.
10. The apparatus of claim 8 , wherein the heat spreader has a second coefficient of thermal expansion in the second perpendicular direction, that is greater than the coefficient of thermal expansion of the die.
11. The apparatus of claim 8 , wherein the second coefficient of thermal expansion is lower than the coefficient of thermal expansion of the die, so that the heat spreader applies a tensile stress in the second direction at the operating temperature.
12. The apparatus of claim 8 , wherein the heat spreader comprises a metal matrix with uniaxial carbon fibers.
13. The apparatus of claim 8 , wherein the coefficient of thermal expansion of the heat spreader is selected to result in a determined stress on the die at an operating temperature of the die, the apparatus further comprising
a solder to couple the heat spreader to the die at a temperature higher then the operating temperature of the die, the solder forming a mechanical bond that does not creep at operating and ambient temperatures.
14. An apparatus comprising:
a die;
a stress structure mechanically coupled to the die at a first temperature, the stress structure having a coefficient of thermal expansion different from the die;
wherein the die and coupled stress structure are maintained at a second lower temperature, so that the stress structure applies a stress to the die at the second temperature through the mechanical coupling.
15. The apparatus of claim 14 , wherein the stress structure comprises a metal heat spreader and wherein the mechanically coupling comprises a solder connection between the heat spreader and the die.
16. The apparatus of claim 14 , wherein the stress structure comprises a coating and wherein the mechanically coupling comprises a coating deposited on the die.
17. The apparatus of claim 14 , wherein the second temperature comprises an operating temperature of the die.
18. A computer system comprising:
a motherboard; and
a processor coupled to the motherboard, the processor having a die including a semiconductor substrate and metal oxide semiconductor (MOS) devices and a stress structure mechanically coupled to the substrate and aligned with respect to the substrate so that under thermal expansion, the stress structure applies a stress in one direction with respect to the substrate through the mechanical coupling that improves the performance of at least a portion of the MOS devices.
19. The computer system of claim 18 wherein the processor is coupled to the motherboard using a socket.
20. The computer system of claim 18 , wherein the stress structure comprises a material having a coefficient of thermal expansion different from the coefficient of thermal expansion of the substrate so that the stress structure applies a stress to the substrate at an operating temperature.
21. The system of claim 20 , wherein the stress structure comprises a metal matrix with uniaxial carbon fibers.