Versatile system for conditioning slurry in CMP process
The present invention provides a system ( 100 ) for conditioning multi-component slurries utilized in chemical mechanical polishing (CMP) of semiconductor wafers ( 140 ). The system provides a first slurry component ( 108 ), and a second slurry component ( 120 ). A conditioning component ( 102 ) has first and second inlets, and an outlet operatively coupled to a dispensing system ( 138 ). First and second flow control components ( 116, 126 ) are operably intercoupled between the first and second inlets and the first and second slurry components, respectively. The system further provides a megasonic energy source ( 106 ), adapted to generate an energy field ( 118 ) across the conditioning component. A conveyance component ( 114 ) conducts the slurry components from the inlets through the energy field, and delivers a final mixture ( 136 ) of multi-component slurry to the outlet.
1. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an enemy field across the conditioning component during chemical mechanical polishing;
wherein the conditioning component comprises a conveyance component, operatively coupled to the first and second inlets and to the outlet; and further wherein the conditioning component comprises an energy transmission component interposed between the conveyance component and the energy source.
2. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an enemy field across the conditioning component during chemical mechanical polishing;
wherein the conditioning component comprises a conveyance component, operatively coupled to the first and second inlets and to the outlet; and further wherein the conveyance component comprises a conduit.
3. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an energy field across the conditioning component during chemical mechanical polishing;
wherein the energy source comprises a sonic energy source.
4. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an enemy field across the conditioning component during chemical mechanical polishing;
wherein the energy source comprises a megasonic transducer.
5. The system of claim 4 , wherein the megasonic transducer is operable between about 700K cycles/second and about 2M cycles/second.
6. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an enemy field across the conditioning component during chemical mechanical polishing;
wherein the conditioning component comprises a conveyance component, operatively coupled to the first and second inlets and to the outlet; and further wherein the conveyance component comprises one or more deviations.
7. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an enemy field across the conditioning component during chemical mechanical polishing;
wherein the first and second flow control components are manually operable.
8. A CMP slurry mixing system comprising:
a first CMP slurry component supply;
a second CMP slurry component supply;
a conditioning component, having first and second inlets and an outlet;
first and second flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
an energy source adapted to generate an energy field across the conditioning component during chemical mechanical polishing;
wherein the first and second flow control components are automated.
9. A system for providing immediate mix adjustment in multi-component slurry for chemical mechanical polishing, the system comprising:
first and second CMP slurry component supplies;
a conditioning component, having first and second inlets and an outlet;
first and second selectively adjustable flow control components, operably intercoupled between the first and second inlets and the first and second CMP slurry component supplies, respectively; and
a selectively adjustable megasonic energy source, adapted to generate a megasonic energy field across the conditioning component;
wherein either the megasonic energy source or the first or second flow control components are adjusted to alter mixing of the first and second CMP slurry component supplies during the chemical mechanical polishing.