Image sensor package, camera module having same and manufacturing method for the same
An exemplary image sensor package includes a substrate, an imaging area, a circuit layer and two passive components. The substrate has a first surface and a second surface, which are opposite to each other. An image sensing area is formed on the first surface of the substrate and a circuit layer is formed on the second surface of the substrate. The passive components opposite to the image sensing area are soldered to the circuit layer of the second surface.
1. An image sensor package, comprising:
a substrate having a first surface and a second surface, opposite to each other;
an imaging area forming on the first surface of the substrate;
a circuit layer formed on the second surface of the substrate; and
passive components opposite to the image sensing area soldered to the circuit layer of the second surface.
2. The image sensor package of claim 1 , wherein the second surface forms a concave area on which the circuit layer is formed.
3. The image sensor package of claim 1 , comprising solder balls formed on the circuit layer.
4. The image sensor package of claim 1 , wherein the circuit layer has two opposite surfaces respectively coated with protective layers thereon.
5. The image sensor package of claim 1 , wherein the substrate is made with silicon material.
6. The image sensor package of claim 3 , wherein a height each of the solder balls is bigger than a height of each of the passive components.
7. The image sensor package of claim 1 , wherein each of the passive components is one selected from the group consisting of a resistor, a capacitor and an inductor.
8. A manufacturing method of an image sensor package, comprising:
supplying a substrate with a first surface and a second surface, opposite to each other;
forming imaging areas at the first surface of a substrate;
forming a circuit layer on the second surface of the substrate corresponding to the imaging areas of the surface; and
soldering passive components on the circuit layer of the second surface opposite to the imaging area of the first surface.
9. The manufacturing method of claim 8 , further comprising:
coating a protective layer on the second surface;
exposing the protective layer of the second surface; and
developing the protective layer of the second surface to form openings of through vias.
10. The manufacturing method of claim 9 , further comprising:
forming a protective layer of the circuit layer; and
soldering solder balls on the corresponding openings of the through vias, -respectively.
11. The manufacturing method of claim 8 , wherein the circuit layer is formed on the second surface by sputtering.
12. The manufacturing method of claim 8 , wherein the second surface is etched to form a plurality of concave areas thereon according to the corresponding positions of the imaging areas before the circuit layer is formed on the second surface.
13. The manufacturing method of claim 8 , wherein the substrate is made of silicon material.
14. The manufacturing method of claim 10 , wherein a height of each of the solder balls is bigger than a height of each of the passive components.
15. The manufacturing method of claim 10 , wherein the through vias are made of copper.
16. The manufacturing method of claim 8 , wherein each of the passive components is one selected from the group consisting of a resistor, a capacitor and an inductor.