Semiconductor package and manufacturing method thereof
A semiconductor package includes a lead frame, at least one chip, and an encapsulation. The lead frame has a plurality of leads, and each of the leads includes at least one first conductive part, at least one second conductive part, and at least one third conductive part. The first conductive part is not electrically connected to the second conductive part, and the second conductive part is electrically connected to the third conductive part. The chip is electrically connected to the first conductive part. The encapsulation encapsulates the chip and at least a portion of the lead frame, and forms a first surface and a second surface opposite to the first surface. The first conductive part and the third conductive part are exposed from the first surface, and the second conductive part is exposed from the second surface.
1. A semiconductor package, comprising:
a lead frame, comprising a plurality of leads, wherein each lead comprises at least one first conductive part, at least one second conductive part, and at least one third conductive part, the first conductive part is not electrically connected to the second conductive part, and the second conductive part is electrically connected to the third conductive part;
at least one chip, electrically connected to the first conductive part; and
an encapsulation, encapsulating the chip and at least a portion of the lead frame, and forming a first surface and a second surface opposite to the first surface,
wherein the first conductive part and the third conductive part are exposed from the first surface, and the second conductive part is exposed from the second surface.
2. The semiconductor package according to claim 1 , wherein an uplifting portion is further disposed between the first conductive part and the second conductive part.
3. The semiconductor package according to claim 1 , wherein a downward extending portion is further disposed between the second conductive part and the third conductive part.
4. The semiconductor package according to claim 1 , wherein a back side of the chip is exposed from the first surface of the encapsulation.
5. The semiconductor package according to claim 1 , wherein the lead frame further comprises a chip carrier for carrying the chip.
6. The semiconductor package according to claim 1 , wherein the chip is electrically connected to the first conductive part by flip-chip bonding and/or wire bonding.
7. The semiconductor package according to claim 1 , wherein the second conductive part is electrically connected to at least one electronic device.
8. The semiconductor package according to claim 7 , wherein the electronic device is selected from a group consisting of a chip, a package, a multi-chip module (MCM), a multi-package module (MPM), and any combination thereof.
9. The semiconductor package according to claim 1 , wherein the semiconductor package is a quad flat package (QFP) or a quad flat non-leaded package (QFN).
10. A manufacturing method of a semiconductor package, comprising:
providing a lead frame, wherein the lead frame comprises a plurality of leads, each lead comprises at least one first conductive part, at least one second conductive part, and at least one third conductive part, and the second conductive part is electrically connected to the first conductive part and the third conductive part;
providing at least one chip, and electrically connecting the chip to the first conductive part; and
encapsulating the chip and at least a portion of the lead frame by an encapsulation, so as to form a first surface and a second surface opposite to the first surface, wherein the first conductive part and the third conductive part are exposed from the first surface, and the second conductive part is exposed from the second surface; and
separating the first conductive part from the second conductive part.
11. The manufacturing method according to claim 10 , wherein the separating manner is sawing, laser cutting, or etching.
12. The manufacturing method according to claim 10 , wherein the chip is electrically connected to the first conductive part by flip-chip bonding and/or wire bonding.
13. The manufacturing method according to claim 10 , further comprising electrically connecting the second conductive part to at least one electronic device.
14. The manufacturing method according to claim 13 , wherein the electronic device is selected from a group consisting of a chip, a package, a multi-chip module (MCM), a multi-package module (MPM), and any combination thereof.
15. The manufacturing method according to claim 10 , wherein the semiconductor package is a quad flat package (QFP) or a quad flat non-leaded package (QFN).